Abstract:Herein, the characteristics of AlN epilayers grown directly on hole‐type patterned sapphire substrate (HPSS) by hydride vapor‐phase epitaxy (HVPE) are reported. To investigate the effect of HPSS, the threading dislocation densities (TDDs) of AlN films grown simultaneously on HPSS and flat sapphire substrate (FSS) are analyzed by transmission electron microscopy. The corresponding TDD is measured to be 4.38 × 108 cm−2 for the AlN sample grown on HPSS, which is significantly lower than the value of 1.48 × 109 cm… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.