2005
DOI: 10.1007/s11664-005-0247-6
|View full text |Cite
|
Sign up to set email alerts
|

Realization of intrinsic p-type ZnO thin films by metal organic chemical vapor deposition

Abstract: P-type ZnO thin films were grown on sapphire substrates with and without nitrous oxide (N 2 O) by metal organic chemical vapor deposition (MOCVD). The intrinsic p-type ZnO films were achieved by controlling the Zn:O ratio in the range of 0.05-0.2 without N 2 O flow. Secondary ion mass spectroscopy (SIMS) showed that the films contained little or no nitrogen (N) impurities for all samples. The p-type behavior of the samples should be due to the intrinsic acceptorlike defects V Zn , for ZnO film grown without ni… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
13
0

Year Published

2006
2006
2019
2019

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 26 publications
(14 citation statements)
references
References 25 publications
1
13
0
Order By: Relevance
“…This result successfully demonstrated that nitrogen can be incorporated into the ZnO thin film lattice by using a combination of zinc acetate and ammonium acetate precursors. The tendency of decreasing grain size and crystallinity with the incorporation of nitrogen in ZnO lattice is similar to that in some previously reported works [26,37,38].…”
Section: Thin Films and Characterizationsupporting
confidence: 90%
“…This result successfully demonstrated that nitrogen can be incorporated into the ZnO thin film lattice by using a combination of zinc acetate and ammonium acetate precursors. The tendency of decreasing grain size and crystallinity with the incorporation of nitrogen in ZnO lattice is similar to that in some previously reported works [26,37,38].…”
Section: Thin Films and Characterizationsupporting
confidence: 90%
“…As noted above, we collected a large number of published Tauc analyses of undoped ZnO that included plots of the absorbance data against the photon energy . This was critical, as our assessment of the application of the Tauc method required the consistent application of a fitting method, as described below.…”
Section: Modelmentioning
confidence: 99%
“…The DLE for highly c-axis oriented ZnO film peaking at 2.5 eV while the QDs embedded film has a DLE centered at 2.26 eV. It is generally well accepted that the DLE at around visible spectrum is attributed to the recombination of a photogenerated hole with an electron in singly ionized oxygen vacancy in ZnO films [10,19,20]. The ratio of NBE to DLE is generally used to evaluate the concentration of structural defects in ZnO films.…”
Section: Article In Pressmentioning
confidence: 99%