Realization of high thermoelectric performance in solution-synthesized porous Zn and Ga codoped SnSe nanosheets

Li, Shuang; Hou, Yunxiang; Li, D.; Zou, Bo; Zhang, Qingtang; Cao, Yang; Tang, Guodong

doi:10.1039/d2ta03079a

Cited by 10 publications

(12 citation statements)

References 63 publications

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“…although the carrier concentration is markedly enhanced. Figure d shows the comparison of S values between the Sn 0.98 Ge 0.01 In 0.01 Se sample and reported Sn 0.97 Ge 0.03 Se, Sn 0.97 Zn 0.01 Ga 0.02 Se, 4% nanopore SnSe, Sn 0.96 Ga 0.04 Se, Sn 0.948 Cd 0.023 Se, 5T Se quantum dot/Sn 0.99 Pb 0.01 Se, and polycrystalline SnSe with 30 MPa sintering pressure . A vast increase in S can be found for the Sn 0.98 Ge 0.01 In 0.01 Se sample.…”

Section: Results and Discussionmentioning

confidence: 94%

“…However, mutual coupling relations between these parameters for optimization of electrical and thermal transport properties simultaneously is full of challenges. Recently, many strategies have been proved to be effective in improving ZT , including size effect, band engineering, − nanostructuring, − energy-filtering effect, , all-scale hierarchical structure design, , phase separation, , defect engineering, − chemical doping, − entropy engineering, − etc.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

et al. 2022

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SnSe single crystals have gained great interest due to their excellent thermoelectric performance. However, polycrystalline SnSe is greatly desired due to facile processing, machinability, and scale-up application. Here, we report an outstanding high average ZT of 0.88 as well as a high peak ZT of 1.92 in solution-processed SnSe nanoplates. Nanosized boundaries formed by nanoplates and lattice strain created by lattice dislocations and stacking faults effectively scatter heat-carrying phonons, resulting in an ultralow lattice thermal conductivity of 0.19 W m–1 K–1 at 873 K. Ultraviolet photoelectron spectroscopy reveals that Ge and In incorporation produces an enhanced density of states in the electronic structure of SnSe, resulting in a large Seebeck coefficient. Ge and In codoping not only optimizes the Seebeck coefficient but also substantially increases the carrier concentration and electrical conductivity, helping to maintain a high power factor over a wide temperature range. Benefiting from an enhanced power factor and markedly reduced lattice thermal conductivity, high average ZT and peak ZT are achieved in Ge- and In-codoped SnSe nanoplates. This work achieves an ultrahigh average ZT of 0.88 in polycrystalline SnSe by adopting nontoxic element doping, potentially expanding its usefulness for various thermoelectric generator applications.

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Section: Results and Discussionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

et al. 2022

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“…It is worth noting that the ZT ave of ≈0.65 can be achieved in the composition of Sn 0.92 Ge 0.04 Bi 0.04 Te-10%AgBiTe 2 over a wide temperature range (300-873 K). A high ZT ave can yield a high theoretical energy conversion efficiency η, since η can be estimated as [63] 1…”

Section: Resultsmentioning

confidence: 99%

Band Modification and Localized Lattice Engineering Leads to High Thermoelectric Performance in Ge and Bi Codoped SnTe–AgBiTe₂ Alloys

Nie

Wang

et al. 2023

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SnTe, emerging as an environment‐friendly alternative to conventional PbTe thermoelectrics, has drawn significant attention for clean energy conversion. Here, a high peak figure of merit (ZT) of 1.45 at 873 K in Ge/Bi codoped SnTe–AgBiTe2 alloys is reported. It is demonstrated that the existence of Ge, Bi, and Ag facilitate band convergence in SnTe, resulting in remarkable enhancement of Seebeck coefficient and power factor. Simultaneously, localized lattice imperfections including dislocations, point defects, and micro/nanopore structures are caused by incorporation of Ge, Bi, and Ag, which can effectively scatter heat carrying phonons with different wavelengths and contribute to an extremely low κL of 0.61 W m−1 K−1 in Sn0.92Ge0.04Bi0.04Te–10%AgBiTe2. Such high peak ZT is achieved by decouples electron and phonon transport through band modification and localized lattice engineering, highlighting promising solutions for advancing thermoelectrics.

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“…Sn 0.85 V 0.09 Sb 0.09 Te-7%AgSbTe 2 exhibits a high peak ZT of ∼1.5 at 873 K. For practical application, thermoelectric materials need to operate over a wide range of temperatures, which requires a high average ZT ( ZT ave ). ZT ave is calculated according to the following formula: Z T ave = 1 T normalh − T normalc ∫ T normalc T normalh ZT d T where T c and T h represent the temperatures of the cold side and hot side, respectively.…”

Section: Resultsmentioning

confidence: 99%

Interstitial Defects Facilitate Dense Dislocations and Band Convergence for High Thermoelectric Performance in SnTe

et al. 2022

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SnTe, emerging as a promising lead-free thermoelectric candidate, has received a great deal of attention for power generation. Here, we report a record-high average ZT of 1.02 as well as a high peak ZT of ∼1.5 through the V/Sb and AgSbTe 2 alloying approach in SnTe. We demonstrate that the aggregation of V interstitials promotes the formation of dense dislocation arrays and dislocation networks, which effectively scatters heat-carrying phonons and contributes to an extremely low κ L of ∼0.41 W m −1 K −1 . More importantly, V interstitials provide pinning effects to dislocation motion, indicating the high stability of our materials at elevated temperatures. Also, V interstitials and Ag alloying facilitate band convergence in SnTe, resulting in a remarkable enhancement of the Seebeck coefficient. The carrier concentration can be tuned to an optimal level. The power factor sharply increases over the whole temperature range due to band convergence induced by Ag incorporation and optimized carrier concentration. Benefits of the decoupling of electron and phonon transport, such as high average ZT and peak ZT, can be realized, making SnTe an attractive candidate for highly effective solid-state thermoelectric devices.

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Realization of high thermoelectric performance in solution-synthesized porous Zn and Ga codoped SnSe nanosheets

Abstract: SnSe is considered as one of the most intriguing new thermoelectric materials. Polycrystalline SnSe offers a wide range of thermoelectric applications for its facile synthesis processing and machinability. Here, we...

Cited by 10 publications

References 63 publications

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

Band Modification and Localized Lattice Engineering Leads to High Thermoelectric Performance in Ge and Bi Codoped SnTe–AgBiTe₂ Alloys

Interstitial Defects Facilitate Dense Dislocations and Band Convergence for High Thermoelectric Performance in SnTe

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Realization of high thermoelectric performance in solution-synthesized porous Zn and Ga codoped SnSe nanosheets

Abstract: SnSe is considered as one of the most intriguing new thermoelectric materials. Polycrystalline SnSe offers a wide range of thermoelectric applications for its facile synthesis processing and machinability. Here, we...

Cited by 10 publications

References 63 publications

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

Band Modification and Localized Lattice Engineering Leads to High Thermoelectric Performance in Ge and Bi Codoped SnTe–AgBiTe2 Alloys

Interstitial Defects Facilitate Dense Dislocations and Band Convergence for High Thermoelectric Performance in SnTe

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Band Modification and Localized Lattice Engineering Leads to High Thermoelectric Performance in Ge and Bi Codoped SnTe–AgBiTe₂ Alloys