Realization of a non-markov chain in a single 2D mineral RRAM

Zhang, Rongjie; Teng, Changjiu; Liao, Wugang; Liu, Bilu; Cheng, Hui‐Ming

doi:10.1016/j.scib.2021.04.025

Cited by 16 publications

(9 citation statements)

References 39 publications

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“…The engineering efforts are mostly spent on how to better control the filament creation and switching in this emerging memory technology to improve the uniformity and stability. where 2D mica RRAM device was shown to exhibit unique non-Markov chain characteristic [34]. This work demonstrates significant potential of 2D mineral materials for electronics and further opens the door for the production of such RRAM devices with numerous functions and applications.…”

Section: Introductionmentioning

confidence: 71%

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

et al. 2023

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The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

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Section: Introductionmentioning

confidence: 71%

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

et al. 2023

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“…The vertical gradient distribution of K + ions in mica after applying voltage is demonstrated by Zhang et al using TOF-SIMS. [44] We suppose that the K + ions would migrate vertically through the defect of the muscovite mica to the other side of the layer. But after the external bias is removed, the K + ions is constrained by the Al 2 (AlSi 3 O 10 )(OH) 2layer and the memory state can be kept.…”

Section: (5 Of 8)mentioning

confidence: 99%

Electrically Tuning Interfacial Ion Redistribution for mica/WSe₂ Memory Transistor

Yang

Wang

et al. 2022

Adv Elect Materials

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Memory device is an important part of electronic equipment. 2D transition metal dichalcogenides that exhibit novel electrical characteristics hold promise in developing new types of memory device. Here, the memory effect in 2D mica/WSe2 heterostructure is investigated. Under applying constant bias voltage and gate voltage, the K+ ions in mica will migrate in the direction of the electric field and be trapped to enable the memory function. The gradient K+ ions work as long‐range scatters to electrostatically dope the WSe2 channel. The shift of the threshold voltage indicates an electrostatic doping concentration up to 2.11 × 1012 cm−2. The operating voltage is as low as 10 V and the on/off ratio is estimated to be 104. To determine the mechanism, the dynamic behavior of the device is discussed and a model is proposed which reveals the correlation between the programming/erasing process and the device performance. Moreover, through defining and studying the effective charge trapping rate, θ, it is found that the trapped charge is proportional to the charge flowing through the channel which means that the device performance can be finely tuned by the programming process.

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“…Moreover, compared with other doping strategies, the ion migration provides a larger electrostatic field to dope 2D semiconductors. The inner ions in ionic 2D minerals are movable under the application of external fields, [46] which offers the possibility of ion-based electrostatic doping to the 2D semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Switchable and Reversible p⁺/n⁺ Doping in 2D Semiconductors by Ionic 2D Minerals

Zhang

Sun

Zhao

et al. 2023

Adv Funct Materials

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2D semiconductors are promising for fabricating miniaturized and flexible electronic devices. The manipulation of polarities in 2D semiconductors is key to fabricate functional devices and circuits. However, the switchable and reversible control of polarity in 2D semiconductors is challenging due to their ultrathin body. Herein, a reversible and non‐destructive method is developed to dope 2D semiconductors by using ionic 2D minerals as the electrostatic gating. The 2D semiconductor channel can be reversibly transformed between n+ and p+ types with carrier concentrations of 1.59 × 1013 and 6.82 × 1012 cm−2, respectively. With the ability to in situ control carrier type and concentration in 2D semiconductors by ionic gating, a reversible PN/NP junction and programmable logic gate are demonstrated in such devices. This 2D mineral materials‐based ionic doping approach provides an alternative method for achieving multi‐functional and complex circuits in an all‐2D material flatform.

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Realization of a non-markov chain in a single 2D mineral RRAM

Cited by 16 publications

References 39 publications

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Electrically Tuning Interfacial Ion Redistribution for mica/WSe₂ Memory Transistor

Switchable and Reversible p⁺/n⁺ Doping in 2D Semiconductors by Ionic 2D Minerals

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Realization of a non-markov chain in a single 2D mineral RRAM

Cited by 16 publications

References 39 publications

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Electrically Tuning Interfacial Ion Redistribution for mica/WSe2 Memory Transistor

Switchable and Reversible p+/n+ Doping in 2D Semiconductors by Ionic 2D Minerals

Contact Info

Product

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Electrically Tuning Interfacial Ion Redistribution for mica/WSe₂ Memory Transistor

Switchable and Reversible p⁺/n⁺ Doping in 2D Semiconductors by Ionic 2D Minerals