Real-time STM study of inter-nanowire reactions: GdSi2 nanowires on Si(100)

Harrison, Brandon; Boland, John J.

doi:10.1016/j.susc.2005.07.014

Cited by 19 publications

(12 citation statements)

References 19 publications

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“…Recently, there have been hot STM studies of GdSi 2 nanowire reactions on Si(100) which have helped to define the structure of a new type of nanowire [8]. Hot STM imaging has also been used to identify an intermediate, Bi-related, linear structure formed during Bi/Si(001) surface annealing [9].…”

Section: Introductionmentioning

confidence: 99%

Hot STM of nanostructure dynamics on SrTiO₃(001)

et al. 2006

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The dynamics of nanostructured surface phases on SrTiO 3 (001) have been analysed using in situ scanning tunnelling microscopy (STM) above 800 • C. During high-temperature annealing, the formation, growth and ordering of the nanostructures has been observed. Dilines, with a width of ∼1 nm, are formed from a TiO 2 -rich intermediary at 800 • C. STM during annealing at 825 • C has enabled us to follow both the growth and dissolution of dilines. Following extended annealing, trilines with a width of ∼2 nm and ordered two-dimensional (2D) nano-arrays form from the diline domains. Our observations of diline dissolution implies random nucleation and growth, followed by rearrangement at elevated temperature to form domains. M This article features online multimedia enhancements

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Section: Introductionmentioning

confidence: 99%

Hot STM of nanostructure dynamics on SrTiO₃(001)

et al. 2006

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“…10 It has been proposed that these other phases could form 3D islands with smaller aspect ratios than the 1DNW. 11,13 There has been no experimental verification of this supposition, although prior cross sectional transmission electron microscopy ͑TEM͒ results showing that DySi 2 3D islands can consist of either the hexagonal phase or the orthorhombic phases. 4,14 In this paper, we report both cross-sectional and plan view TEM data on a nanometer scale DySi 2 islands grown on Si͑001͒, including both 3DNW and rectangular islands.…”

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confidence: 99%

Crystallographic study of self-assembled dysprosium silicide nanostructures on Si(001)

Crimp

Nogami

2006

Phys. Rev. B

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The crystallography of epitaxial dysprosium silicide nanometer scale islands on Si͑001͒ has been studied using transmission electron microscopy. Cross-sectional high resolution images show that the silicide nanostructures have either hexagonal or orthorhombic/tetragonal crystal structure. Moiré fringe patterns from plan view specimens show that elongated islands have the hexagonal structure while islands with smaller aspect ratios have the orthorhombic/tetragonal structure of DySi 2 . Less lattice distortion and/or fewer dislocations are seen along the small lattice mismatch direction for both the hexagonal and orthorhombic/tetragonal silicides, indicating that lattice mismatch plays an important role in controlling island morphology.Several rare earth metal silicides form nanowires ͑NW͒ on silicon surfaces. 1-8 These NW are attractive objects for study since they have nanometer scale lateral dimensions, micron scale lengths, they show metallic conduction, and they can exhibit interesting one dimensional band structures. 9 It is generally agreed that these silicides form NW due to a lattice mismatch anisotropy between the silicides and the substrate. 2,3 For the case of dysprosium, when the hexagonal form of Dy disilicide ͑DySi 2 ͒ grows with the a and c axes parallel to the Si͑001͒ surface along Si͗110͘ directions, the mismatches with the substrate along the two perpendicular axes are small ͑−0.23% ͒ and large ͑7.32%͒, respectively. 10 Consequently, the growth along the a axis is energetically preferred, while the growth is constrained along the c axis, resulting in NW formation.In fact, during the initial stages of DySi 2 growth on Si͑001͒, a variety of nanostructures are formed, and the terminology used to describe them varies in the literature. The nanostructures with the smallest cross section are highly elongated islands that are a single layer of silicide thick; we have referred to these structures as nanowires in our previous work, and we will call them one dimensional nanowires ͑1DNW͒ here. 3,7,9 It is also possible to grow highly elongated islands that are somewhat thicker ͑heightϾ 0.6 nm͒ and broader ͑widthϾ 5 nm͒ and composed of more than two or three atomic layers of silicide. These have also been called nanowires in the literature, and we refer to them here as three dimensional nanowires ͑3DNW͒. 2,5,6 Finally, there are also three dimensional silicide islands with much smaller aspect ratios ͑for convenience, these islands will be referred to as rectangular islands, and the 3DNW and rectangular islands collectively as 3D islands͒. [2][3][4]7,11 Much of the prior work on the rare earth ͑RE͒ silicide nanowires is in fact evenly split between 1DNW and 3DNW, with no particular distinction drawn between them. However, it is interesting to consider how they may differ, since the structure of a single silicide layer and multiple layers of silicide would be not necessarily be the same.Further complicating the growth of 3D islands is the fact that in addition to the hexagonal phase, DySi 2 has two other polym...

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“…23 Growth of GdSi 2 nanowires on a silicon substrate, Si (100), has been reported. 24,25,26,27 Yet even today, these Gd-based compounds are not well understood, and their fundamental properties should be further studied. 12,16,19 In the past, basic magnetic properties of orthorhombic GdSi 2 and GdGe 2 were studied: they order AFM at 27 and 28 K, respectively.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure and magnetic properties of GdSi1.78, Gd(Si0.684Ge0.316)1.78, GdGe1.57, and GdSn2 compounds

Zou

Liu

Yan

2015

Journal of Magnetism and Magnetic Materials

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Intermetallic compounds of Gd with Si, Ge, and Sn near 1:2 stoichiometry adopt several closely related crystal structures. We find that GdSi 1.78 and Gd(Si 0.684 Ge 0.316) 1.78 crystallize in the same GdSi 1.4-type orthorhombic structure (space group Imma), while GdGe 1.57 and GdSn 2 adopt -ThSi 2-type tetragonal structure (space group I4 1 /amd) and ZrSi 2-type orthorhombic structure (space group Cmcm), respectively. All compounds order antiferromagnetically; their Néel temperatures are only weakly affected by the magnetic field of less than 50 kOe. Unusual features are observed including multiple phase transitions and thermomagnetic irreversibilities.

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Real-time STM study of inter-nanowire reactions: GdSi2 nanowires on Si(100)

Cited by 19 publications

References 19 publications

Hot STM of nanostructure dynamics on SrTiO₃(001)

Hot STM of nanostructure dynamics on SrTiO₃(001)

Crystallographic study of self-assembled dysprosium silicide nanostructures on Si(001)

Crystal structure and magnetic properties of GdSi1.78, Gd(Si0.684Ge0.316)1.78, GdGe1.57, and GdSn2 compounds

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Real-time STM study of inter-nanowire reactions: GdSi2 nanowires on Si(100)

Cited by 19 publications

References 19 publications

Hot STM of nanostructure dynamics on SrTiO3(001)

Hot STM of nanostructure dynamics on SrTiO3(001)

Crystallographic study of self-assembled dysprosium silicide nanostructures on Si(001)

Crystal structure and magnetic properties of GdSi1.78, Gd(Si0.684Ge0.316)1.78, GdGe1.57, and GdSn2 compounds

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Hot STM of nanostructure dynamics on SrTiO₃(001)

Hot STM of nanostructure dynamics on SrTiO₃(001)