Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment

Layadi, N.; Cabarrocas, Pere Roca i; Drévillon, B.; Solomon, I.

doi:10.1103/physrevb.52.5136

Cited by 137 publications

(58 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We showed that both surface and growth zone processes are involved in the growth of µc-Si:H [12][13] . Moreover, the optical models used to analyse the ellipsometry measurements indicate that the nucleation of crystallites takes place in a highly porous layer below the film surface 14 .…”

Section: Introductionmentioning

confidence: 90%

The role of hydrogen in the formation of microcrystalline silicon

Morral

Bertomeu

Cabarrocas

2000

Materials Science and Engineering: B

View full text Add to dashboard Cite

Abstract:The growth mechanisms of microcrystalline films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that µc-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding on microcrystalline silicon formation.

show abstract

Section: Introductionmentioning

confidence: 90%

The role of hydrogen in the formation of microcrystalline silicon

Morral

Bertomeu

Cabarrocas

2000

Materials Science and Engineering: B

View full text Add to dashboard Cite

show abstract

“…13,20 Another example is the amorphous-tonanocrystalline transformation of hydrogenated silicon thin films upon exposure to H atoms from a H 2 plasma. [21][22][23] Furthermore, nanometer-size diamonds have been formed from multiwalled carbon nanotubes ͑MWCNTs͒ and carbon onions by exposure to H atoms from a H 2 plasma or electronbeam exposure at or above 1000 K; 9,24,25 interactions of H atoms with MWCNTs have been speculated to be responsible for the transformation of MWCNT walls to diamond nanocrystals. 24 The underlying mechanism of the H-induced structural transition in MWCNTs leading to nanocrystalline carbon is not well understood.…”

Section: Introductionmentioning

confidence: 99%

Analysis of diamond nanocrystal formation from multiwalled carbon nanotubes

et al. 2009

View full text Add to dashboard Cite

A systematic analysis is presented of the nanocrystalline structures generated due to the intershell C-C bonding between adjacent concentric graphene walls of multiwalled carbon nanotubes ͑MWCNTs͒. The analysis combines a comprehensive exploration of the entire parameter space determined by the geometrical characteristics of the individual graphene walls comprising the MWCNT with first-principles density-functional theory calculations of intershell C-C bonding and structural relaxation by molecular-dynamics simulation of the resulting nanocrystalline structures. We find that these structures can provide seeds for the nucleation of the cubic-diamond and hexagonal-diamond phase in the form of nanocrystals embedded in the MWCNTs. The resulting lattice structure is determined by the chirality and relative alignment of adjacent graphene walls in the MWCNT. These crystalline phases are formed over the broadest range of nanotube diameters and for any possible combination of zigzag, armchair, or chiral configurations of graphene walls. The key parameter that determines the size of the generated nanocrystals is the chiral-angle difference between adjacent graphene walls in the MWCNT.

show abstract

“…Several techniques can be used to eliminate the incubation layer during the first stages of nc-Si : H growth: variable hydrogen dilution [13] and cyclical variation of hydrogen dilution [14] during hot-wire CVD process were employed to create a seed layer of Si nanocrystals. Layadi et al [15] used layer-by-layer deposition with an appropriate ratio of a-Si : H deposition time to hydrogen plasma treatment time to produce a fully crystallized interface. Van den Donker et al [16] tailored the initial SiH 4 density to prevent the formation of the incubation layer and deposit microcrystalline silicon films from pure SiH 4 .…”

Section: Introductionmentioning

confidence: 99%

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH₃)₃

Filonovich¹,

Águas²,

Busani³

et al. 2012

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (∼20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film.

show abstract

Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment

Cited by 137 publications

References 20 publications

The role of hydrogen in the formation of microcrystalline silicon

The role of hydrogen in the formation of microcrystalline silicon

Analysis of diamond nanocrystal formation from multiwalled carbon nanotubes

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH₃)₃

Contact Info

Product

Resources

About

Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment

Cited by 137 publications

References 20 publications

The role of hydrogen in the formation of microcrystalline silicon

The role of hydrogen in the formation of microcrystalline silicon

Analysis of diamond nanocrystal formation from multiwalled carbon nanotubes

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

Contact Info

Product

Resources

About

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH₃)₃