2006
DOI: 10.1149/1.2356291
|View full text |Cite
|
Sign up to set email alerts
|

Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy

Abstract: Kinetics of initial oxidation of Si(110)-16x2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ~10^-5-Pa oxygen molecules, the Si(110) surface at 540 deg-C is already covered with 0.3-monolayer oxide. This rapid initial oxidation can be related to oxidation at or around the ada… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2007
2007
2008
2008

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 8 publications
0
1
0
Order By: Relevance
“…Recently, we have conducted real-time synchrotron radiation photoemission spectroscopy (SR-XPS) on initial oxidation of Si(110)-16 Â 2 surface, and found a rapid initial oxidization regime, which is not observed on other surfaces such as a Si(001)-2 Â 1 surface and a Si(111)-7 Â 7 surface. 3,4) We have further clarified that the O 1s peak from both room-temperature (RT)-and high-temperature-oxidized surfaces can be separated into four subpeaks. 3) However, the atomistic process of the initial oxidation, including the background of rapid initial oxidation, has been unclear so far.…”
Section: Introductionmentioning
confidence: 87%
“…Recently, we have conducted real-time synchrotron radiation photoemission spectroscopy (SR-XPS) on initial oxidation of Si(110)-16 Â 2 surface, and found a rapid initial oxidization regime, which is not observed on other surfaces such as a Si(001)-2 Â 1 surface and a Si(111)-7 Â 7 surface. 3,4) We have further clarified that the O 1s peak from both room-temperature (RT)-and high-temperature-oxidized surfaces can be separated into four subpeaks. 3) However, the atomistic process of the initial oxidation, including the background of rapid initial oxidation, has been unclear so far.…”
Section: Introductionmentioning
confidence: 87%