77th ARFTG Microwave Measurement Conference 2011
DOI: 10.1109/arftg77.2011.6034573
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Real-time non-linear de-embedding

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Cited by 7 publications
(4 citation statements)
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“…This last step is actually very important. In fact, if strong nonlinear capacitive effects are present, nonlinear embedding procedure must be applied to properly move the reference plane from the intrinsic current generator to the device tabs [17], [18].…”
Section: Guidelines For Contours Drawingmentioning
confidence: 99%
“…This last step is actually very important. In fact, if strong nonlinear capacitive effects are present, nonlinear embedding procedure must be applied to properly move the reference plane from the intrinsic current generator to the device tabs [17], [18].…”
Section: Guidelines For Contours Drawingmentioning
confidence: 99%
“…After this step, the resistive core voltages and currents are available. By using the nonlinear de‐embedding technique, the waveform engineering can be performed at the measurement phase by monitoring in real time the dynamic load line at the CGP, while optimum source and loading conditions are achieved at the accessible EP …”
Section: Measurement‐based Waveform Engineeringmentioning
confidence: 99%
“…By using the nonlinear de-embedding technique, the waveform engineering can be performed at the measurement phase by monitoring in real time the dynamic load line at the CGP, while optimum source and loading conditions are achieved at the accessible EP. 66 As a case study, a 0.25-mm GaN HEMT with a total periphery of 200 mm is considered, whose bias condition was set at V DQ 5 20 V, I DQ 5 15 mA (i.e., class-AB operation) and the fundamental frequency at 5 GHz. Before performing the large-signal characterization, the optimal value of the load termination was estimated according to the Cripps' load-line theory 3,12 for the considered operating conditions.…”
Section: High-frequency Waveform Engineeringmentioning
confidence: 99%
“…This poses a challenge when such circuits need to be analysed during device prototyping, as conventional measurement techniques treat the device under test (DUT) as a black box, i.e., only the input and output port-based response of the device is measured providing traditional metrics like gain, efficiency etc., with no indication of the internal device operation. While real-time de-embedding methods in conjunction with active load-pull (LP) allow inspection of the intrinsic drain current and voltage, without the readily-available distributed packaged transistor models they are still just the port based measurements providing no information of the internal distributed device operation [3]. The distributed device behaviour has been addressed in the simulation domain by the introduction of multiphysics-based modelling approaches [1], [4].…”
Section: Introductionmentioning
confidence: 99%