Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

“…[14,15] for experimental details). For alpha-particle test, the reported SER values have been extrapolated to a nominal alpha flux of 0.001 alpha/cm 2 /h.…”

“…Two different SER test equipments, specially designed for the study, have been developed and assembled by Bertin Technologies (Aix-en-Provence, France) for the 130 nm devices [14][15][16] and by iRoC Technologies (Grenoble, France) for the 65 nm ones [17], respectively. Fig.…”

“…Both 130 nm and 65 nm bitcells were fully modeled with 3D TCAD tools (Sentaurus Synopsys package [31]) to evaluate their sensitivity to heavy ions and to determine the SEU/SBU and MBU/ MCU occurrences as a function of ion parameter [32][33][34]. In complement to TCAD work, numerous experimental studies were conducted these four last years to characterize the different test chips from an accelerated-test point-of-view with neutrons at the Los Alamos Neutron Science Center (LANSCE), as well as with an intense Am 241 alpha source at STMicroelectronics [14,15].…”

“…In this context, the present work surveys our 2005-2010 experiments and modeling-simulation works [12][13][14][15][16][17] dedicated to the evaluation of natural radiation-induced soft errors in advanced static memory (SRAM) technologies following a real-time (i.e. life testing) approach.…”

Self Immunity To Reinforce The Vulnerability Factors on Soft Errors In 64 Bit Register File

“…The key challenge in distinguishing whether the ECC bits are embedded in the register value or not, is that the 2 We consider only the dynamic power and more details will be shownlater. 3 We formulate our problem similarly to .…”