Real time monitoring of pentacene growth on SiO2 from a supersonic source

Abstract

Thin film growth of pentacene on SiO 2 using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy E i and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, E i = 2.5-7.2 eV and GR= 0.0015-0.2 ML s −1 , the thin film phase is always observed. We find that while the effect of E i on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.

Determination of optical constants of pentacene thin film by spectroscopic ellipsometry

“…1(a) presents LA-XRD spectra of the pentacene films grown on ITO and Si surfaces. Bragg peaks corresponding to 5:7 3 and 11:45 3 indicates pure ''thin film'' phase in triclinic structure with (001) reflections giving d 001 ¼ 15:5Å, in accordance with previous reports on pure ''thin film'' phase of pentacene [6,23,24]. Notably, there is no indication of the ''bulk'' phase.…”

Single‐Layer Pentacene Field‐Effect Transistors Using Electrodes Modified With Self‐assembled Monolayers

“…[ [32][33][34] In the detailed structure of (001) diffraction peak, two different phases appear to the right of (001) with inter-plane distance of $14.4 Å corresponding to the (001) single crystal phase [35,36] and to the left of (001) with inter-plane distance of $16.4 Å corresponding to a configuration in which pentacene molecules stand up at 908 angle with respect to the substrate surface. [37] These phases however, make up a very small fraction of the film, as evidenced by their extremely low X-ray diffraction intensity.…”

Quantitative modeling ofin situx-ray reflectivity during organic molecule thin film growth

“…Below, we describe implementations of three of the models described above: the empirical model described by Braun et al 15 , a simplified version of the model introduced by Trofimov et al 42 , and our variant 19,20,48 of the distributed model introduced in Ref. [40].…”