Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors With Hf<italic>x</italic>Zr1–<italic>x</italic>O<italic>y</italic>Thin Films

“…To investigate their radiation response, devices were irradiated at an on-site radiation response probe station system with a 662-KeV Cs 137 γ-ray radiation source [22]. After taking into account the dose enhancement effect, the dose rate of HfO2 and HfxZr1-xOy thin films was 0.119 × 10 -3 krad/s (SiO2).…”

Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

“…After taking into account the dose enhancement effect, the dose rate of the HfO 2 thin film was 0.116 rad (HfO 2 )/s [12,14]. A total dose up to 45 krad (HfO 2 ) was applied to all the irradiated HfO 2 samples with a constant gate bias of +1 V or -1 V. During the biased irradiation, the pulse CV or conventional CV measurements were employed to investigate the charge trapping mechanism of HfO 2 film at each total dose level.…”

“…As a consequence, our group has recently developed a radiation response testing system with pulse-CV technique, which is capable of estimating the radiation response of MOS devices while the devices are continuously irradiated by -rays. The principles and reliability of the system have been reported in our previous work [12]. In this work, we investigate the radiation effect on HfO 2 gate dielectrics, which is evaluated by the proposed technique and compared to that extracted from conventional measurements.…”