Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

Abstract

We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures -the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G-and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G-and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits.

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

“…where ω 0 is the optical phonon energy. Equation (4) generalizes that obtained previously [13] for the case of the dominant optical phonon generation-recombination processes by the introduction of a phenomenological fac-…”

“…Unique energy spectra, of graphene (G) [1] and a fewlayer Black Phosphorus layer or phosphorene (P) [2], their optical and electric properties, and recent advances in technology open remarkable prospects for the creation of novel devices using G-layers [3][4][5][6], the P-layers [2,[7][8][9][10], and different hybrid structures including the G-P hybrid structures [11][12][13]. In particular, the GP hybrid systems can be used for the improvement of various devices.…”

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

“…The intraband contributions Re σ intra ω + Im σ intra ω depend on the carrier momentum relaxation mechanisms in the GL, particularly, on the range of the effective carriercarrier interactions and on disorder [59] (see also [50]). At fairly high carrier densities, expected under the injection conditions under consideration, the electron-hole interactions are the main mechanism of the momentum relaxation [60][61][62].…”

“…The mutual carrier scattering is similar to the scattering on uncharged and screened charged impurities, as well as the acoustic phonons and defects. In this case, the momentum relaxation time as a function of the electron or hole momenta can be presented as τ p = τ 0 (p 0 /p) [50,51], where p 0 = T 0 /v W and τ 0 is the characteristic carrier momentum relaxation time. If the dominant scattering mechanism is associated with the carrier interactions with weakly screened charged impurities or their clusters, i.e., with the long-range scatterers, one can set τ p = τ 0 (p/p 0 ).…”

“…One of such candidates for the injector material is the black phosphorus [33][34][35][36][37][38]. This material is now considered to be very promising for different electronic and optoelectronic devices applications (see, for example, [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51]). The quantity ∆ V in the black phosporous layers (PLs) comprising several atomic sheets is estimated as ∆ V ≃ 100 meV with the energy band ∆ G = ∆ V + ∆ C ≃ 300 meV (∆ C is the GL-PL electron affinity).…”