Reactivity of the HSi (1 1 1) surface

Terry, Jeff; Mo, R.; Wigren, C.; Cao, R.; Mount, G. H.; Pianetta, P.; Linford, Matthew R.; Chidsey, Christopher E. D.

doi:10.1016/s0168-583x(97)00467-9

Cited by 58 publications

(59 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…annealed at 700 • C (Si(1 1 1) C 5 /700 • ). In general agreement with previously published results [16][17][18], EW XPS showed no signicant difference between the Si(1 1 1) H and Si(1 1 1) C 5 samples, while the EW XPS was significantly higher for the Si(1 1 1) C 5 /700 • material because of the added contribution to the spectrum from the Si(1 1 1) (7 × 7) reconstruction. The PE max values of these three spectra were constant to within 0.1 eV because all the spectra were dominated by the bulk Si peak.…”

Section: Introductionsupporting

confidence: 92%

Comparison of the equivalent width, the autocorrelation width, and the variance as figures of merit for XPS narrow scans

Singh

Velázquez

Terry

et al. 2014

Journal of Electron Spectroscopy and Related Phenomena

Self Cite

View full text Add to dashboard Cite

Section: Introductionsupporting

confidence: 92%

Comparison of the equivalent width, the autocorrelation width, and the variance as figures of merit for XPS narrow scans

Singh

Velázquez

Terry

et al. 2014

Journal of Electron Spectroscopy and Related Phenomena

Self Cite

View full text Add to dashboard Cite

“…Though certainly disturbing, this discrepancy is not particularly large, especially if compared with discrepancies obtained in similar analyses (ca 20 instead of 4, for pentylterminated 111 silicon 41 ). Nonetheless, if we want to stress the analysis to make up for this anomaly, we may assume one or the other of the following hypotheses: the presence of adventitious species with C 0 /C ý ratio higher than 7; or line shapes for C or C ý differing from Gaussian.…”

Section: Making Up For the Anomalies Of The Enized Surfacesmentioning

confidence: 61%

Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 × 1 (100) silicon

Cerofolini¹,

Galati²,

Reina³

et al. 2006

Surf. Interface Anal.

View full text Add to dashboard Cite

A quantitative angle-resolved XPS analysis was carried out of the carbonaceous films resulting from the derivatization under mild thermal activation of nearly flat, terraced, dihydrogen-terminated, 1 × 1 (100) Si with 1-octene or 1-octyne. The analysis of the C 1s signal gave evidence for the presence of carbon in carbide configuration (Si-C bonds) at the substrate-film interface, in addition to the alkanic carbon and adventitious oxidized carbon (C-O bonds) produced by the oxidizing impurities flawing the reaction. Assuming the surface as uniformly covered, the analysis showed that for both reactants the films were closely packed.

show abstract

“…[20][21][22][23][24][25] These chlorination methods start from the wet-chemically prepared H-terminated silicon surface. Wet chemical silicon chlorination methods have been described in the liquid phase using phosphorus pentachloride ͑PCl 5 ͒ and a radical initiator as a Cl radical source.…”

Section: Introductionmentioning

confidence: 99%

“…Wet chemical silicon chlorination methods have been described in the liquid phase using phosphorus pentachloride ͑PCl 5 ͒ and a radical initiator as a Cl radical source. [21][22][23][24][25][26] Gas phase methods, either in the dark 27 or using UV light in a low pressure chamber, 24 have also been demonstrated. Relatively little structural characterization has been performed to date on such chlorinated Si surfaces.…”

Section: Introductionmentioning

confidence: 99%

Chlorination of hydrogen-terminated silicon (111) surfaces

Rivillon

Chabal

Webb

et al. 2005

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

View full text Add to dashboard Cite

Infrared absorption spectroscopy was used to investigate the chlorination of hydrogen-terminated Si͑111͒ surfaces by three different methods: ͑a͒ exposure to a saturated solution of phosphorus pentachloride ͑PCl 5 ͒ in chlorobenzene; ͑b͒ exposure to chlorine gas, Cl 2 ͑g͒, and ͑c͒ exposure to Cl 2 ͑g͒ under UV illumination. X-ray photoelectron spectroscopy and first principles model ͑clusters͒ calculations were used to explore the structure and dynamics of these surfaces. The infrared spectra exhibited sharp chlorine-related vibrations at 586 and 527 cm −1 . The narrow full width at half maximum of these vibrations for all three preparation methods indicated that all functionalization schemes produced a nearly complete monolayer of Cl with little surface roughening or introduction of step edges. The 527 cm −1 mode was at a much higher frequency than might be expected for the bending vibration of Si monochloride. Theoretical calculations show, however, that this vibration involves the displacement of the top Si atom parallel to the surface, subject to a relatively stiff potential, shifting its frequency to a value fairly close to that of the Si-Cl stretching mode on a Si͑111͒ surface.

show abstract

Reactivity of the HSi (1 1 1) surface

Cited by 58 publications

References 21 publications

Comparison of the equivalent width, the autocorrelation width, and the variance as figures of merit for XPS narrow scans

Comparison of the equivalent width, the autocorrelation width, and the variance as figures of merit for XPS narrow scans

Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 × 1 (100) silicon

Chlorination of hydrogen-terminated silicon (111) surfaces

Contact Info

Product

Resources

About