Reactivity of methane in a nitrogen discharge afterglow

Jauberteau, Jean-Louis; Jauberteau, Isabelle; Cinelli, Milton José; Aubreton, J.

doi:10.1088/1367-2630/4/1/339

Cited by 29 publications

(29 citation statements)

References 26 publications

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“…Although, we do not have enough evidence to propose a complete mechanism to account for the formation of the SiO 2 thin films, in line with the previous results by Jauberteau 25 and other authors, 9,10 it is reasonable to assume that the formation of the oxide film from TMSCl is a process that involves the adsorption on the substrate of either the precursor molecule or some reactive fragments resulting from its activation and eventual fragmentation. On the surface, the competition between the polymerization of these fragments to yield SiO x C y H z polymeric chains and the oxidation or etching of organic fragments of these films leading to the removal of organic components will control the formation of SiuO bonds.…”

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formasupporting

confidence: 81%

“…This results contrasts with those reported by other authors showing the formation of SiO 2 thin films by using TMS in plasma microwave reactors with downstream configurations. 13,24 Jauberteau et al 25 have reported that an afterglow Ar plasma may yield a large fragmentation of the TMS molecule, mainly via SiuC bond breaking. This process principally generates Si(CH 3 ) fragments.…”

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formamentioning

confidence: 99%

“…1͒ might indicate that the Ar addition favors the etching and oxidation at the surface of the organosilicon fragments, a process that has been reported previously by other authors. 25,26,22 Within this phenomenological description, it is possible to reconcile the high roughness with the low growing rate as well as the SiO 2 composition of the prepared thin films by assuming that intermediate siliconelike layers and/or fragments are being produced during the deposition of the films. Then, this polymeric material deposited on the surface is further oxidized by the plasma to yield gases (CO 2 and H 2 O) that would be desorbed whereas SiC x O y H z layers or fragments are being incorporated onto the surface.…”

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formamentioning

confidence: 99%

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Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Barranco

Cotrino

Yubero

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Silicon dioxide thin films have been prepared at room temperature by remote plasma-enhanced chemical vapor deposition in a downstream reactor by using Si(CH 3 ) 3 Cl as a volatile precursor and a microwave electron cyclotron resonance external source. Experiments are done at constant pressure by changing the relative amount of Ar species R in the plasma gas. The aim was to obtain thin films with low density and, therefore, low refractive index. Characterization of the species of the plasma is carried out by optical emission spectroscopy. The changes of the plasma conditions are correlated with the growing rate and microstructure of the films, the latter determined by atomic force microscopy and infrared spectroscopy. It is found that the growing rate of the films decreases and their roughness increases as R increases. The optical properties of SiO 2 thin films are analyzed by optical ellipsometry. A decrease in the refractive index is found for the films grown with high values of R. The possible routes for activation of the precursor and the formation of the SiO 2 thin films are discussed.

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Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formasupporting

confidence: 81%

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formamentioning

confidence: 99%

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formamentioning

confidence: 99%

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Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Barranco

Cotrino

Yubero

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…OH radicals, as O and H atoms, are key species for the initiation of combustion since they are the main species responsible for breaking C-H bonds in hydrocarbon fuels [25]. OH emission is characterized by a violet band system centred at 309 nm due to theA 2 →X 2  transition [26], [27].…”

Section: B Spectroscopic Investigationsmentioning

confidence: 99%

Combustion Process Analysis in a DISI Engine Fuelled with N-Butanol through UV-VIS Emission Spectroscopy

Tornatore¹,

Irimescu²,

Marchitto³

et al. 2015

IJET

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Abstract-In this paper, the study on the effects of n-butanol on the combustion process in a DISI engine has been conducted.Experiments were performed on a direct injection SI engine operated on gasoline and butanol, with combined analysis of in-cylinder pressure traces, exhaust emissions and optical data. The optically accessible power unit was fitted with a commercial head and a high pressure wall guided injection system working at 100 bar. The engine speed was set at 2000 rev/min as a representative value for mid-road load automotive use. Different spark timings were tested. All trials were performed at close to stoichiometric air-fuel ratio.UV-visible natural emission spectroscopy was applied to investigate the formation and the evolution of the main compounds characterizing the spark ignition and combustion process. Pollutant measurements (HC, CO and NOx) at undiluted exhaust, for gasoline and butanol, were correlated with pressure related data and optical results.Index Terms-Spark ignition engines, direct injection, butanol, optical investigations.

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“…It is indicated that the oxygen atoms are consumed or quenched under this condition, as analyzed in previous works. [8,17,18] In conclusion, a coaxial-cylinder dielectric barrier discharge is used to activate a premixed CH 4 /air Bunsen flame. The physical appearance of the Bunsen flame and its changes are directly imaged by transient OH/CH-PLIF imaging while the emission spectra of these flames are recorded.…”

mentioning

confidence: 99%

Laser Diagnostics of Combustion Enhancement on a CH ₄ /Air Bunsen Flame by Dielectric Barrier Discharge

Zhang¹,

Yu²,

Zhang³

2013

Chinese Phys. Lett.

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We investigate plasma-assisted combustion for premixed CH4/air Bunsen flames. Dielectric barrier discharge (DBD) is employed to produce non-equilibrium plasma for combustion enhancement. The transient planar laser induced fluorescence (PLIF) technique of CH and OH radicals is used to image reaction zones for enhancement measurement, and the emission spectra of the Bunsen flame are monitored to explore the kinetics mechanism. From the drift of radicals in PLIF images, the quantitative enhancement of plasma on the flame velocities of premixed methane/air flames is experimentally measured, and the data show that the flame velocities are increased by at least 15% in the presented equivalence ratio range. Furthermore, the well analyzed emission spectra of the Bunsen flame (300-800 nm) with/without DBD reveal that the emissions as well as the concentrations of the crucial radicals (like C2, CH, OH etc.) in combustion all are intensified greatly by the discharge. In addition, the appearance of excited spectral bands of N2 and N + 2 during discharge indicates that the premixed gas is also heated and ionized partially by the DBD.

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Reactivity of methane in a nitrogen discharge afterglow

Cited by 29 publications

References 26 publications

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Combustion Process Analysis in a DISI Engine Fuelled with N-Butanol through UV-VIS Emission Spectroscopy

Laser Diagnostics of Combustion Enhancement on a CH ₄ /Air Bunsen Flame by Dielectric Barrier Discharge

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Reactivity of methane in a nitrogen discharge afterglow

Cited by 29 publications

References 26 publications

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Combustion Process Analysis in a DISI Engine Fuelled with N-Butanol through UV-VIS Emission Spectroscopy

Laser Diagnostics of Combustion Enhancement on a CH 4 /Air Bunsen Flame by Dielectric Barrier Discharge

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Laser Diagnostics of Combustion Enhancement on a CH ₄ /Air Bunsen Flame by Dielectric Barrier Discharge