Reactivity and magnetism of Fe/InAs(100) interfaces

Structure, reactivity, electronic configuration and magnetism of samarium atomic layers deposited on Si(001) by molecular beam epitaxy

“…Ferromagnetic/semiconductor interfaces are widely studied in view of the emerging field of spintronics [1]. The main feature of all these systems consists of a strong intermixing of the metal with the semiconductor at the interface, no matter if this semiconductor is Si [2,3] or a III-V semiconductor such as GaAs or InAs [4]. Relatively fewer studies concentrated on the interfaces formed by 4f metals on semiconductors, despite the fact that the atomic radii of these elements (in the range or 1.8 Å) are considerably larger than that of 3d metals (1.24, 1.25 and 1.26 Å for Ni, Co and Fe, respectively) [5].…”

Thermodynamic modeling of the system As–Fe combined with first-principles total energy calculations

“…Considerable efforts have been devoted to clarify and control interface reactions during the fabrication process of these structures and to optimize the process parameters [2]. Although the phase diagram provides the fundamental information in the development of electronic devices [3], the details of phase equilibria and thermodynamic properties of the ternary systems As-Fe-Ga and As-Fe-In have not been fully established.…”

Low temperature two-dimensional behaviour of spin and orbital moments in Ni monolayers grown on Cu(001)

“…The complete procedure is described in more detail in Refs. [13,17]. The results are plotted in Fig.…”

“…This technique allows the simultaneous determination of spin and orbital moments [11]. There are two reasons for separate knowledge of orbital moments: (i) of the 3d ferromagnetic metals, Ni is the most itinerant one, as recognised from the early stages of the magnetism theory [12]; (ii) the important increase of orbital moments at surfaces, due to symmetry breaking and narrowing of 3d bands [13].…”