Reactive sticking coefficients for silane and disilane on polycrystalline silicon

Buss, Richard J.; Ho, Pauline; Breiland, William G.; Coltrin, Michael E.

doi:10.1063/1.340982

Cited by 164 publications

(84 citation statements)

References 37 publications

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“…The value is in good agreement with those reported by Kleijn (6e-4), ~5 Gates (2-5e-4), 38 and Buss (le-3). 46 k2 was fitted to the medium and high pressure side of region 1 which is insensitive to k~. K~ 2 was fitted in region 1 where it is most significant.…”

Section: Fitting Of Rate Constants To Experiments--inmentioning

confidence: 99%

Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures

Holleman

Verweij

1993

J. Electrochem. Soc.

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The deposition of silicon (St) from silane (Sill4) was studied in the silane pressure range from 0.5 to 100 Pa (0.005 to 1 mbar) and total pressure range from 10 to 1000 Pa using N2 or He as carrier gases. The two reaction paths, namely, heterogeneous and homogeneous decomposition could be separated by varying the amount of wafer area per unit volume (wafer-distance variation) and the Sill4 partial pressure as well as the total pressure. Rate constants were derived by fitting the experimental results. The heterogeneous reaction path could be described by only the adsorption rate constants of reactive species and the desorption rate constant of hydrogen using a Langmuir-Hinshelwood mechanism. Hydrogen and phosphine were found to suppress the deposition rate at low silane pressures. At high silane pressures or high total pressures the unimolecular decomposition of silane dominates. The unimolecular rate constant was found to be one to two orders larger than literature values based on RRKM analyses of high pressure rate data. The relative efficiency of SiH4-N2 and SiH4-He collisions compared with SiH4-SiH4 collisions in the unimolecular gas-phase decomposition of Sill4 has been investigated. Helium was found to be a weak eollider compared to silane and nitrogen.Polycrystalline silicon plays an important role in the semiconductor industry, namely, in integrated circuits (IC), thin film transistors (TFT), solar cells, and sensors. An extensive review of many scientific aspects and applications of polysilicon is given in Ref. 1.In general polysilicon is deposited in hot-wall tube reactors where loads of 50 to 100 wafers are processed in one run. The depositions are performed using 100% Sill4 or 23 % Sill4 diluted in an inert gas at Sill4 partial pressures of between 10 and 30 Pa (0.1 to 0.3 mbar) at 625~ m Under these conditions the growth rate is dominated by a Langmuir-Hinshelwood type of heterogeneous Sill4 decomposition with H2 release from Si-H bonds as the rate determining step. 4'~ The unimoleeular gas-phase decomposition becomes important at higher Sill4 or higher total pressures. The homogeneous path is, in general, less desirable, because large polymers may be formed that coalesce to particles. 6 Thickness inhomogeneity at the wafer edge, due to local variation of the area per unit volume, is another problem related to highly reactive product formation in gas-phase reactions. 6-9However, in the case of in situ phosphorus or arsenic doping, the surface sites become blocked by PH3-or AsH3-related surface species, and the growth rate is strongly reduced.7'10'" In order to achieve reasonable growth rates the homogeneous path has then to be promoted thereby creating molecules and radicals that are more reactive than Sill4 and are able to compete with PH:~ or AsH3 for surface sites. The inhomogeneity at the wafer edge related to the gasphase path and the discontinuity of area per unit volume at the wafer edge, the so called "bull's eye" effect, is caused by the high reactivity of the gas-phase products and...

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Section: Fitting Of Rate Constants To Experiments--inmentioning

confidence: 99%

Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures

Holleman

Verweij

1993

J. Electrochem. Soc.

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“…Reported activation energies range between 0 and 17 kJ mol . 32.7273 Hence, the standard activation enthalpy of silane adsorption, AH%, was kept fixed at zero during the regression.…”

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confidence: 99%

The Kinetics of the Low‐Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane

Weerts

Croon

Marin

1998

J. Electrochem. Soc.

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The kinetics of the deposition of polycrystalline silicon from silane were studied at 25-125 Pa and 863-963 K using a continuous flow perfectly mixed reactor equipped with a microbalance and a quadrupole mass spectrometer for in situ deposition rate measurements and on-line gas-phase analysis. It was possible to obtain rate coefficients that are intrinsic, i.e., only determined by chemical phenomena. A four-step elementary gas-phase reaction network coupled to a tenstep elementary surface network was able to describe the experimental data. Pressure falloff behavior of gas-phase reactions was taken into account using the Rice-Ramsberger-Kassel-Marcus theory. In the surface reaction mechanism, adsorption of silane, hydrogen, and highly reactive gas-phase intermediates and first-order desorption of hydrogen are the only kinetically significant steps. Silylene and disilane are the most abundant gas-phase intermediates, causing typically one fifth of the overall silicon growth.

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“…DLA, the Knudsen diffusion coefficient (m~ s-~), is given by N/ 8RT , D~c,A = 2/3hfl(w/h)fz(h/L ) rCMA (8) with h the distance between two wafers in the stack, w the width of the wafer and L the length of the wafer. R, T and MA have their usual meaning.…”

Section: Experiments With Inert Gasmentioning

confidence: 99%

“…Indirect information mostly is based on LPCVD growth data. Buss et al [8] studied the adsorption of silane and disilane on polycrystalline silicon using molecular beam scattering (MBS) in the temperature range 900-1350 K. A simple mechanism was proposed to explain the observations: a dissociative adsorption of silane and disilane with competing associative desorption of silane and further dehydrogenation of the silicon hydride species to solid silicon and dihydrogen. A reasonable agreement between model and experiment was found.…”

Section: Introductionmentioning

confidence: 99%

The adsorption of silane, disilane and trisilane on polycrystalline silicon: a transient kinetic study

1996

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Reactive sticking coefficients for silane and disilane on polycrystalline silicon

Cited by 164 publications

References 37 publications

Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures

Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures

The Kinetics of the Low‐Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane

The adsorption of silane, disilane and trisilane on polycrystalline silicon: a transient kinetic study

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