Reactive sputtering and associated plant design

Holland, L.; Siddall, Gillian

doi:10.1016/0042-207x(53)90563-6

Cited by 20 publications

(6 citation statements)

References 7 publications

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“…6(a and b) it is concluded that as-deposited and annealed TiO 2 films do not show two regions which might be due to the amorphous structure which is a most commonly observed phenomenon with high room temperature resistivity (1.58 × 10 6 for as-deposited and 9.33 × 10 4 cm for annealed TiO 2 films). Electron beam irradiation causes a sharp decrease in resistivity (3.16 × 10 3 cm) which may be due to the partial dissociation of the oxide to provide excess titanium [22]. From Fig.…”

Section: Optical Absorption Studiesmentioning

confidence: 94%

Effect of electron irradiation on properties of chemically deposited TiO2 nanorods

Dhawale¹,

Dubal²,

Salunkhe³

et al. 2010

Journal of Alloys and Compounds

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Section: Optical Absorption Studiesmentioning

confidence: 94%

Effect of electron irradiation on properties of chemically deposited TiO2 nanorods

Dhawale¹,

Dubal²,

Salunkhe³

et al. 2010

Journal of Alloys and Compounds

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“…Zn(NO 3 ) 2 (aq) + 2NaOH(aq) -Zn(OH) 2 (s) + 2NaNO 3 (aq) (10) Zn(OH) 2 (s) + yNH 3 (aq) -Zn(OH) 2 (NH 3 ) y (aq) (11) The product was stable in solution and decomposed at very low temperatures (o150 1C) via:…”

Section: Solution Deposited Tcosmentioning

confidence: 99%

“…Devices on a SiO 2 gate dielectric exhibited reasonable field-effect responses (m = 0.7 cm 2 (V s) À1 , on-to-off ratio of 10 6 ). Interestingly, when the ratio was increased further (10)(11)(12)(13)(14)(15), additional InOOH impurities formed and device performance dropped. Many doped and alloyed TCO material systems are In 2 O 3 -based and are discussed in later sections.…”

Section: Solution Deposited Tcosmentioning

confidence: 99%

Solution processing of transparent conductors: from flask to film

2011

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This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films. TCOs play a critical role in many current and emerging opto-electronic devices due to their unique combination of electronic conductivity and transparency in the visible region of the spectrum. Atmospheric-pressure solution processing is an attractive alternative to conventional vacuum-based deposition methods due to its ease of fabrication, scalability, and potential to lower device manufacturing costs. An introduction into the applications of and material criteria for TCOs will be presented first, followed by a discussion of solution routes to these systems. Recent studies in the field will be reviewed according to their materials system. Finally, the challenges and opportunities for further enabling research will be discussed in terms of emerging oxide systems and non-oxide based transparent conductors (341 references).

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“…Second, the small diameter of the wire causes po to vary from the bulk properties of the metal [6] since the wire diameter approaches the mean free path of an electron; PI does not vary this way [7,8].…”

Section: Description Of the Barrettermentioning

confidence: 99%

“…An accurate method of calibration is by the use of a microcalorimeter [2], in which the ratio of WSUB to the net rf power flowing across an arbitrary plane W NET into the bolometer is measured. This form provides a method of measuring the net power from WSUB, 7], and E. The substituted doc power is measured relatively easily, efficiency can be measured by the impedance technique (as mentioned previously), and now with the results of the analysis of this paper, substitution error can be calculated. For frequency ranges where microcalorimeters are not available, or for organizations to which they are not accessible, this provides an accurate means of calibrating barretters.…”

Section: Introductionmentioning

confidence: 99%

Calculation of substitution error in barretters

Jarvis¹,

Adams²

1968

J. RES. NATL. BUR. STAN. SECT. C. ENG. INSTR.

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Th is pape r describes a mathe ma ti cal a na lysis for de te rminin g the value of the substituti on e rror of a bolomete r with a Woll aston-w ire e leme nt (ba rrette r). The a na lys is re Aects a ll significant nonlin ea riti es in th e heat Aow, in c ludin g so me not co ve red be fore, a nd in cludes a ll apprec ia bl e heat trans port mec ha nisms simulta neously.. ' The va lues of s ub stituti o n e rror thu s obt a in e d , in co njun c tio n with e ffi cie ncy da ta obta me d b y mic rowave techniqu es, will be very useful in exte nding powe r me ter ca libra ti ons to freq ue ncy ra nges wh e re extre mely accura te mic rocalorime ters are not ava il a bl e.Key Word s : Barrette r, bolome te r, mi crowa ve powe r meas ure me nts, sub stituti on e rro r.

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Reactive sputtering and associated plant design

Cited by 20 publications

References 7 publications

Effect of electron irradiation on properties of chemically deposited TiO2 nanorods

Effect of electron irradiation on properties of chemically deposited TiO2 nanorods

Solution processing of transparent conductors: from flask to film

Calculation of substitution error in barretters

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