Reactive sputter deposition and properties of TaxN thin films

Riekkinen, Tommi; Molarius, Jyrki; Laurila, Tomi; Nurmela, A.; Suni, I.; Kivilahti, J.K.

doi:10.1016/s0167-9317(02)00801-8

Cited by 152 publications

(79 citation statements)

References 15 publications

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“…The intrinsic stress in the manufactured films has been found compressive (Table 1). Comparing the values with those reported by Riekkinen et al, [6] we obtained a higher stress for the film having lower resistivity (sample a) and lower stress for the samples c and f, respectively, characterised by high electrical resistivity, the disagreement being likely due to the different deposition conditions.…”

Section: Resultssupporting

confidence: 75%

“…[8] Such a structure is consistent with the resistivity datum reported above (Table 1). Accordingly, Riekkinen et al [6] reported a resistivity of 234 µ cm for Ta 2 N phases. The sample b shows the Ta4f 7/2 component centred at 23.7 eV and can be attributed to a TaN phase.…”

Section: Resultsmentioning

confidence: 99%

“…[4] Their electrical properties span a wide spectrum with Ta 3 N 5 reported as dielectric [4] or semiconductor [5] while stoichiometric Ta 2 N exhibits a metal-like resistivity. [6] In this work, we report the effects of the Ar/N 2 gas ratio of inlet gases and of an additional radio frequency (RF) bias voltage on the electrical, chemical and morphological properties of magnetronsputtered TaN thin film resistors deposited at low temperature (100…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Scandurra

Indelli

Pignataro

et al. 2008

Surface & Interface Analysis

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This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100• C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5 : 1, 2 : 1 and 1 : 1 Ar : N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed an increase in resistivity ongoing from the Ta 2 N phase to the Ta 3 N 5 one. The electrical properties of these films are comparable to those obtained by high temperature deposition process already reported in literature. Furthermore, a roughness and grain size modulation of the above films can be obtained by applying an RF negative bias during deposition without affecting the electrical resistivity.

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Section: Resultssupporting

confidence: 75%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Scandurra

Indelli

Pignataro

et al. 2008

Surface & Interface Analysis

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show abstract

“…TaN film material is widely used in many fields because of its excellent performances [1][2][3][4][5][6]. In the semiconductor industry, TaN film is used as a copper diffusion barrier layer mainly due to its high electrical conductivity and good thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sputtering Power on the Properties of TaN Thin Films Prepared by the Magnetron Sputtering

Lu¹,

Zhang²,

Gu³

2017

dtmse

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“…1,2 Several techniques have been applied to fabricate TaN thin films, including reactive magnetron sputtering, 3 chemical vapor deposition (CVD), 4,5 low-energy nitrogen implantation, and metalorganic chemical vapor deposition (MOCVD). 6,7 Among these techniques, MOCVD is considered as the primary candidate for applying TaN films onto microelectronic devices and hard coatings.…”

Section: Introductionmentioning

confidence: 99%

A New Method for Preparing Pentakis(Diethylamido)Tantalum

Yang

Zhou²,

Xiong³

2012

Electrochemistry

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Pentakis(diethylamido)tantalum (PDEAT) was synthesized by electrochemical reaction involving diethylamide with a sacrificial tantalum anode and stainless steel cathode in the presence of tetraethylammonium bromine as the conductive additive and acetonitrile as the inert support electrolyte. The condensates were isolated by the reduced pressure distillation of as-synthesized crude PDEAT below 5 kPa. The final product was characterized by FT-IR and NMR spectroscopy. The thermal properties of the resulting PDEAT were analyzed by TG-DTG. Results indicate that the resulting compound was indeed PDEAT. The vapor pressure of the compound was calculated from the Langmuir equation, while the enthalpy of vaporization was calculated from vapor pressure-temperature data using the Clausius-Clapeyron equation. The concentration of the impurities in the sample were detected via ICP-Mass spectroscopy, and it was found that the purity of the compound synthesized could reach 99.995%.

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Reactive sputter deposition and properties of TaxN thin films

Cited by 152 publications

References 15 publications

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Effect of Sputtering Power on the Properties of TaN Thin Films Prepared by the Magnetron Sputtering

A New Method for Preparing Pentakis(Diethylamido)Tantalum

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