Reactive sputter deposition: A quantitative analysis

Hohnke, D. K.; Schmatz, D.J.; Hurley, M. D.

doi:10.1016/0040-6090(84)90201-3

Cited by 40 publications

(8 citation statements)

References 17 publications

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“…The atomic composition of the as-deposited samples was measured by Rutherford backscattering spectroscopy (RBS) using (1.4, 1.75) MeV and 2 MeV for the proton and 4 He beams, respectively. The scattering angles were 140 • (standard detector, IBM geometry) and 180 • (annular detector), tilt angles 0 • and 30 • .…”

Section: Methodsmentioning

confidence: 99%

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ZrO_xN_ydecorative thin films prepared by the reactive gas pulsing process

Carvalho¹,

Cunha²,

Alves³

et al. 2009

J. Phys. D: Appl. Phys.

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Zirconium oxynitride thin films were deposited by dc reactive magnetron sputtering. A zirconium metallic target was sputtered in an Ar + N2 + O2 atmosphere. Argon and nitrogen flow rates were maintained constant whereas oxygen was pulsed during the deposition, implementing the reactive gas pulsing process (RGPP). A constant pulsing period T = 3 s was used following an exponential periodic signal versus time. The introduction time of oxygen was systematically changed from 17% to 83% of the period. The RGPP allowed the synthesis of ZrOxNy films with tuneable metalloid concentrations adjusting the introduction time of the oxygen. Composition and structural variations associated with mechanical, optical and electrical properties exhibited a smooth transition, from metallic-like characteristics, typical of the fcc-ZrN phase, to semiconducting behaviour corresponding to a mixture of orthorhombic-Zr3N4(O) and γ-Zr2ON2 crystalline phases.

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Section: Methodsmentioning

confidence: 99%

“…Although reactive sputtering is conceptually simple, it is in fact a complex and non-linear process, which involves many interdependent parameters [2]. A typical feature of the reactive sputtering process is the well-known hysteresis loop of some experimental parameters against the reactive gas (RG) supply in the system [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

ZrO_xN_ydecorative thin films prepared by the reactive gas pulsing process

Carvalho¹,

Cunha²,

Alves³

et al. 2009

J. Phys. D: Appl. Phys.

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“…In the range between 0.3 and 0.6 sccm, the cathode voltage changed rapidly and peaked near 0.5 sccm. The dependence of the cathode voltage to reactive gas flow rate was generally discussed by Hohnke et al [12]. The rapid change of the voltage is correspondent to the so-called cathode "poisoning effect", in which the reaction rate of the reactive gas starts to excess the sputtering rate of the compound on the target.…”

Section: Methodsmentioning

confidence: 98%

Direct current reactive sputtering Cr–Cr2O3 cermet solar selective surfaces for solar hot water applications

et al. 2009

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“…It is well known that the transition between the metal mode and the oxide mode occurs on the metal target surface according to the reactive gas flow rate and applied DC or RF power. [26][27][28][29][30] In this study, we investigated the effects of metal and oxide modes on the properties BZT thin films prepared by a reactive sputtering method using Ba, Zr, and Ti metal targets. During the deposition, the Ar to O 2 ratio was changed from 1 : 0 (Ar: 3.5 sccm, O 2 : 0 sccm) to 0 : 1 (Ar: 0 sccm, O 2 : 3.5 sccm).…”

Section: Methodsmentioning

confidence: 99%

Preparation and characterization of Ba(Zr_xTi₁₋_x)O₃thin films for high-frequency applications

Woong

Shima

Yamamoto

et al. 2014

Jpn. J. Appl. Phys.

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Ba(Zr x Ti 1%x )O 3 (BZT) thin films were deposited on a (100)MgO substrate by RF-magnetron reactive sputtering using metal targets. In this paper, a model of the reactive sputtering process using a metal composite target at different reactive gas flow rates is presented. 500-nm-thick BZT thin (x = 0.26) films for high frequency performance showed a single perovskite phase and a high crystallinity on the MgO substrate with only a (001)/ (100) orientation at an optimum reactive gas flow rate in Ar + O 2 . The BZT films had a stoichiometric Ba/Ti ratio and epitaxially grew on the MgO substrate. They showed a dense microstructure without cracks or voids. Their low capacitance and loss tangent showed little dispersion at 1-18 GHz. These results indicated that we succeeded in depositing high-quality and potentially tunable ferroelectric BZT films for high-frequency applications by RF-magnetron reactive sputtering using metal targets.

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Reactive sputter deposition: A quantitative analysis

Cited by 40 publications

References 17 publications

ZrO_xN_ydecorative thin films prepared by the reactive gas pulsing process

ZrO_xN_ydecorative thin films prepared by the reactive gas pulsing process

Direct current reactive sputtering Cr–Cr2O3 cermet solar selective surfaces for solar hot water applications

Preparation and characterization of Ba(Zr_xTi₁₋_x)O₃thin films for high-frequency applications

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Reactive sputter deposition: A quantitative analysis

Cited by 40 publications

References 17 publications

ZrOxNydecorative thin films prepared by the reactive gas pulsing process

ZrOxNydecorative thin films prepared by the reactive gas pulsing process

Direct current reactive sputtering Cr–Cr2O3 cermet solar selective surfaces for solar hot water applications

Preparation and characterization of Ba(ZrxTi1−x)O3thin films for high-frequency applications

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ZrO_xN_ydecorative thin films prepared by the reactive gas pulsing process

ZrO_xN_ydecorative thin films prepared by the reactive gas pulsing process

Preparation and characterization of Ba(Zr_xTi₁₋_x)O₃thin films for high-frequency applications