Reactive pulsed laser deposition and laser induced crystallization of SnO 2 transparent conducting thin films

Phillips, H. M.; Li, Yunjun; Bi, Zhaoqi; Zhang, Binglin

doi:10.1007/s003390050397

Cited by 5 publications

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“…This was clearly demonstrated in previous work [99], where PLD SnO 2 thin films were grown under vacuum (laser fluence of $4.6 J/cm 2 ) over a wide range of deposition temperatures (from room temperature to 600°C), that the as-deposited film consisted of both a polycrystalline SnO 2 phase and an amorphous SnO (a-SnO) phase. Our experimental result also agreed with findings in the literatures [21,[100][101][102]. It is worth recalling that oxygen deficiency in the deposited films is known to result from laser-induced oxygen desorption from the surface layers of the SnO 2 target [100], leading thereby to the growth of a nonstoichiometric compound.…”

Section: Nucleation and Growth Of Sno 2 Nanocrystallitessupporting

confidence: 91%

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Microstructural evolution of oxides and semiconductor thin films

Chen

Jiao

et al. 2011

Progress in Materials Science

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Section: Nucleation and Growth Of Sno 2 Nanocrystallitessupporting

confidence: 91%

“…Analysis of the structures shows that the thin films consist of tetragonal phase SnO 2 nanocrystals. In most cases, the nanoparticles are predominantly grown with preferred [101] orientation. The geometrical characteristic of SnO 2 nanoparticle is a quasi-spherical shape.…”

Section: Amorphous Tin Oxide Thin Films and Microstructural Transformmentioning

confidence: 99%

Microstructural evolution of oxides and semiconductor thin films

Chen

Jiao

et al. 2011

Progress in Materials Science

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“…In addition, SnO 2 is also non-toxic, abundant, thermally and chemically stable, and relatively low cost. Polycrystalline tin oxide (SnO 2 ) film showing a tetragonal Rutile structure is intrinsically an n-type semiconductor with a wide band-gap, 3.6-4.0 eV [1][2][3]. Un-doped SnO 2 film is not stoichiometric due to the existence of oxygen vacancy, which dominates electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

Tran

Fang

Chin

2015

Materials Science in Semiconductor Processing

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“…Gassensitive fi lms are produced via all the available thin-fi lm technologies, among which one can note thermal evaporation and sputtering (Stryhal et al 2002 ;Saadeddin et al 2007 ) , laser ablation (Phillips et al 1996 ) , spray pyrolysis (Tiburcio-Silver and Sanchez-Juarez 2004 ) , chemical vapor deposition (Heilig et al 1999 ;Choy 2000 ) , atomic-layer deposition (ALD) (Takada 2001 ) , and rheotaxial growth and thermal oxidation (RGTO) . One can fi nd a short description of these methods in Table 28.1 .…”

Section: Thin-film Technologymentioning

confidence: 99%

Technologies Suitable for Gas Sensor Fabrication

Korotcenkov

2013

Integrated Analytical Systems

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in gas sensors is one of the most important tasks of modern materials science. As shown in previous chapters, materials used in gas sensors need to ful fi ll a range of requirements related to the crystallographic structure, chemical composition, electrophysical properties, catalytic activity, and so on. These materials also show a great deal of variation. Materials for gas sensors can come in a variety of forms, including fi lms, ceramics, or powders. Their structure may be amorphous, glassy, nanocrystalline, polycrystalline, single crystalline, or epitaxial. They may be either dense or porous. These materials may be elementary substances, complex compounds, or composites. Polymers, metals, dielectrics, and semiconductors can also be used as materials for chemical sensors. They may be either organic or inorganic in nature.This vast amount of variation indicates that it is impossible to produce such a wide range of materials using just one method. The possible differences in the physical-chemical properties of the materials are too great; so too are the resulting differences in the conditions required for the synthesis and deposition of these materials. Therefore, for preparing gas sensor materials with required properties we have to use various methods (see Fig. 28.1 ). These techniques differ in deposition rates, substrate temperature during deposition, precursor materials, the necessary equipment, expenditure, and the quality of the resulting fi lms. A short account of these methods is presented in Table 28.1 . One can fi nd more detailed analysis of these methods in a vast array of quality reviews devoted to the subject (Brinker and Scherer 1990 ; It is clear that the selection of a method acceptable for sensor material synthesis or deposition during sensor design and fabrication is a complicated task, and we need to analyze many different factors, including the type of technology which will be used for sensor fabrication: ceramic, thick-fi lm, or thin-fi lm technologies. Of course, every technology has advantages and disadvantages. Tables 28.2 and 28.3 present a comparison of several of these methods. Limitations of technology based on the use of 1D nanomaterials (nanowires, nanotubes, etc.) were discussed in

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Reactive pulsed laser deposition and laser induced crystallization of SnO 2 transparent conducting thin films

Cited by 5 publications

References 0 publications

Microstructural evolution of oxides and semiconductor thin films

Microstructural evolution of oxides and semiconductor thin films

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

Technologies Suitable for Gas Sensor Fabrication

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