Reactive ion etching of vertical GaN mesas by the addition of CH4to BCl3/H2/Ar inductively coupled plasma

Lee, Byung‐Teak; Jung, Sun Yong; Lee, J.-L.; Park, Y.-J.; Paek, Mun Cheol; Cho, K.-I.

doi:10.1088/0268-1242/16/6/309

Cited by 13 publications

(5 citation statements)

References 9 publications

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“…It is believed that initial decrease in the etch rate by CH 4 addition is due to the enhanced formation of polymer layers on the etched surface, which suppresses the etching reaction and protects the sidewall. In fact, the formation of polymer layers by the CH 4 addition has also been repeatedly reported in the previous studies, during the ICP etching of InP, SiC and GaN [7][8][9].…”

Section: Resultssupporting

confidence: 60%

Inductively coupled plasma reactive ion etching of ZnO using C₂F₆and NF₃-based gas mixtures

Lee¹,

Lee²

2006

Semicond. Sci. Technol.

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Inductively coupled plasma reactive ion etching (ICP RIE) of ZnO film using C 2 F 6 and NF 3 -based gas mixtures was investigated as a function of ICP power, bias power, pressure, and plasma chemistry. An etch rate of about 410 nm min −1 in the case of C 2 F 6 plasma and about 380 nm min −1 in the case of NF 3 plasma was obtained at the optimum condition, with vertical sidewalls and smooth surfaces, which is about 30% higher than the etch rates obtained in the previous reports on ICP RIE of ZnO using CH 4 or chlorine-related gas mixtures. Basically no chamber contamination and corrosion was observed, indicating that fluorine plasmas are more suitable for ZnO dry etching than previously studied CH 4 or BCl 3 plasma. The addition of 40% or more CH 4 to the C 2 F 6 plasma improved the etch rate and sidewall verticality of the etched mesas, but resulted in rough surface morphology.

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Section: Resultssupporting

confidence: 60%

Inductively coupled plasma reactive ion etching of ZnO using C₂F₆and NF₃-based gas mixtures

Lee¹,

Lee²

2006

Semicond. Sci. Technol.

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“…4,5 Nickel masks have previously been used successfully in chlorine-based ECR etching of GaAs-based systems 6 as well as GaN-based systems. As a result of the relatively strong binding energies of the nitrides, the most suitable etching technologies are those that are capable of high plasma density and ion energies, such as inductively coupled ͑ICP͒ and electron cyclotron resonance ͑ECR͒ plasma sources.…”

Section: Introductionmentioning

confidence: 99%

Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN

Hsu

Kim

Eddy

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High density patterns of holes in metalorganic chemical vapor deposition grown GaN films on sapphire have been fabricated by inductively coupled plasma etching using a nickel mask. Pattern transfer from the e-beam lithographically patterned resist to the nickel etch mask was accomplished by ion beam milling. A Cl 2 -BCl 3 inductively coupled plasma was used to anisotropically etch patterns of 200-250-nm-diam holes with 300 nm center-to-center spacing through the entire thickness of a 265-nm-and a 300-nm-thick GaN film. This work demonstrates a pattern transfer technique to Ni by ion beam milling and Ni as a durable etch mask under a chlorine environment for high density patterning of GaN films.

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“…For milder etching with low damage of to the mask edges the addition of gases (N 2 , CH 4 , H 2 , Ar or a mixture of these gases) have been used. In this case etched sidewalls can be significantly improved, since the addition gases remove etching residues and reagents generated during the etching process, however, the etching rate will decrease with the use of additional gases [69]. Certain surface roughness sometimes can be beneficial.…”

Section: Sidewall Roughness and Damagementioning

confidence: 99%

III–V microdisk/microring resonators and injection microlasers

Kryzhanovskaya¹,

Zhukov²,

Moiseev³

et al. 2021

J. Phys. D: Appl. Phys.

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Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for creating compact, energy-efficient light sources (microlasers) for various applications owing to their small footprints, high Q factors, planar geometry, in-plane light emission, and high sensitivity to the environment. In this review we present the most recent advances in III–V microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators and discuss different designs of III–V microdisk/microring lasers. We focus on the technological key points of the different approaches to realize efficient optical and carrier confinement in the laser cavity. Advantages and disadvantages of various types of the laser active region, i.e. quantum well (QW) and quantum dots, are discussed. We also report on successful fabrication of microlasers with gain medium of mixed dimensionality, so called QW-dots, which is promising for low-threshold, temperature insensitive and high output power operation. We summarized and systematically compare the characteristics of electrically driven microlasers. We address one major shortcoming for the circular WGM lasers, which is that the lasing emission is non-directional and non-homogeneous along the cavity rim. High quality factor of the resonator modes and circular symmetry lead to difficulties in obtaining the directional light output and in obtaining significant levels of the output optical power. We compared various techniques for realizing unidirectional emission or coupling to a waveguide. We also discuss high-speed direct modulation, which is another crucial characteristic for the microlasers. We also address energy consumption characteristics of the WGM microlasers under direct modulation and possibilities of energy-to-data ratio minimization. Finally, we summarize the prospects for the WGM lasers and their role in future applications in communications and sensing.

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Reactive ion etching of vertical GaN mesas by the addition of CH₄to BCl₃/H₂/Ar inductively coupled plasma

Cited by 13 publications

References 9 publications

Inductively coupled plasma reactive ion etching of ZnO using C₂F₆and NF₃-based gas mixtures

Inductively coupled plasma reactive ion etching of ZnO using C₂F₆and NF₃-based gas mixtures

Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN

III–V microdisk/microring resonators and injection microlasers

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Reactive ion etching of vertical GaN mesas by the addition of CH4to BCl3/H2/Ar inductively coupled plasma

Cited by 13 publications

References 9 publications

Inductively coupled plasma reactive ion etching of ZnO using C2F6and NF3-based gas mixtures

Inductively coupled plasma reactive ion etching of ZnO using C2F6and NF3-based gas mixtures

Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN

III–V microdisk/microring resonators and injection microlasers

Contact Info

Product

Resources

About

Reactive ion etching of vertical GaN mesas by the addition of CH₄to BCl₃/H₂/Ar inductively coupled plasma

Inductively coupled plasma reactive ion etching of ZnO using C₂F₆and NF₃-based gas mixtures

Inductively coupled plasma reactive ion etching of ZnO using C₂F₆and NF₃-based gas mixtures