Reactive ion etching of silicon stencil masks in the presence of an axial magnetic field

Pendharkar, S. V.; Wolfe, J. C.; Rampersad, H. R.; Chau, Yeungyeung; Licon, D. L.; Morgan, M. D.; Horne, W. E.; Tiberio, R. C.; Randall, John N.

doi:10.1116/1.588029

Cited by 23 publications

(9 citation statements)

References 8 publications

(8 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fabrication of the ring shape structures consist of first depositing a conformal silicon dioxide (SiO 2 ) layer on the array of PMGI pillars using RF sputtering with Ar gas pressure of 6mTorr and a power of 200W. Directional reactive ion etching of the top and base material using CHF 3 (0.7mTorr, 85W) plasma is then carried out in a magnetically enhance reactive ion etching system [6] while preserving the wall coating. The remaining PMGI is then removed using oxygen plasma and the pattern is transferred A into Permalloy using Ar ion milling (0.5mTorr, 125W).…”

Section: Methodsmentioning

confidence: 99%

Magnetic Annular Nanostructure Fabrication Using Ion Beam Proximity Lithography

Ruiz

Parekh

Rantschler

et al. 2008

2008 8th IEEE Conference on Nanotechnology

View full text Add to dashboard Cite

We describe the fabrication of large-area magnetic ring structures using ion beam proximity lithography (IBPL) to pattern an array of circular openings and then use a conforming oxide coating to define the ring structure through the sidewall coating. Arrays of Permalloy rings with sub 500nm outer diameter and 150nm inner diameter on a 650nm pitch over a 5.5mm x 6mm area were fabricated to study transitions between the micromagnetic configurations within these structures. The results suggest that the field required for onion-to-vortex transition and field required for vortex-to-onion transition to be 0Oe and 400Oe, respectively.

show abstract

Section: Methodsmentioning

confidence: 99%

Magnetic Annular Nanostructure Fabrication Using Ion Beam Proximity Lithography

Ruiz

Parekh

Rantschler

et al. 2008

2008 8th IEEE Conference on Nanotechnology

View full text Add to dashboard Cite

show abstract

“…5 The power density was limited to 200 mW/cm 2 at an O 2 pressure of 0.2 Pa during the removal of the unimplanted carbon ͓Fig. 1͑c͔͒ since higher powers create a highly compressive layer on the back of the mask during the overetching period.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of silicon stencil masks with vitreous carbon ion-absorbing coatings

Ruchhoeft

Wolfe

Wasson

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…8 The IBP a͒ Electronic mail: Paul@bayou.uh.edu masks were fabricated as described in Ref. 9 and consisted of various patterns etched through a 4-m-thick silicon membrane.…”

Section: Methodsmentioning

confidence: 99%

Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

Ruchhoeft

Colburn

Choi

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

145

View full text Add to dashboard Cite

Submicron patterning of 1 in. diameter curved surfaces with a 46 mm radius of curvature has been demonstrated with step and flash imprint lithography ͑SFIL͒ using templates patterned by ion beam proximity printing ͑IBP͒. Concave and convex spherical quartz templates were coated with 700-nm-thick poly͑methylmethacrylate͒ ͑PMMA͒ and patterned by step-and-repeat IBP. The developed resist features were etched into the quartz template and the remaining PMMA stripped. During SFIL, a low viscosity, photopolymerizable formulation containing organosilicon precursors was introduced into the gap between the etched template and a substrate coated with an organic transfer layer and exposed to ultraviolet illumination. The smallest features on the templates were faithfully replicated in the silylated layer.

show abstract

Reactive ion etching of silicon stencil masks in the presence of an axial magnetic field

Abstract: Selective reactive ion etching of silicon nitride over silicon using CHF3 with N2 addition

Cited by 23 publications

References 8 publications

Magnetic Annular Nanostructure Fabrication Using Ion Beam Proximity Lithography

Magnetic Annular Nanostructure Fabrication Using Ion Beam Proximity Lithography

Fabrication of silicon stencil masks with vitreous carbon ion-absorbing coatings

Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

Contact Info

Product

Resources

About