Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma

Kanazawa, Takayuki; Motoyama, Shin-ichi; Wakayama, Tatsuki; Akinaga, Hiroyuki

doi:10.4283/jmag.2007.12.2.081

Cited by 5 publications

(5 citation statements)

References 4 publications

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“…Furthermore, this superiority is maintained in long-term experiments (Figure 3). Both chemicals constitute a mixture used in plasma etching of SiO 2 /Si [15][16][17] and other materials [18]. Figure 4 shows the stability of two Pt/Al 2 O 3 samples differing in their activation temperature (400 or 500 • C).…”

Section: Resultsmentioning

confidence: 99%

“…To this aim, the C-Cl bond hydrogenolysis activity of two metals: palladium and platinum in combination with the dismutation performance of γ-alumina was studied. It appeared that it was possible to obtain nearly full dechlorination of R-22 at 180 • C, with methane and fluoroform as dominant products, i.e., the mixture used in plasma etching of important materials for microelectronics [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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Pd/Alumina Catalysts for Beneficial Transformation of Harmful Freon R-22

et al. 2021

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Chlorodifluoromethane (R-22), the most abundant freon in the atmosphere, was subjected to successful hydrodechlorination in the presence of palladium supported on γ-alumina, at a relatively low reaction temperature (180 °C). The combination of catalytic actions of alumina (performing freon dismutation) and Pd nanoparticles (catalyzing C–Cl bond splitting in the presence of hydrogen) results in the transformation of freon into valuable, chlorine-free products: methane and fluoroform, the mixture of which is used in plasma etching of silicon and silicon nitride. Very highly metal dispersed Pt/Al2O3 catalysts, with metal particles of ~1.3 nm in size, are not as effective as Pd/Al2O3, resulting in only partial dechlorination. A long-term dechlorination screening (3–4 days) showed good catalytic stability of Pd/alumina catalysts.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Pd/Alumina Catalysts for Beneficial Transformation of Harmful Freon R-22

et al. 2021

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“…Working hand-in-hand with the experimental group, we test the ideas laid out in our design and compare them with the experimental results. We have established the computational process design for NiFe and CoFe alloy thin films for RIE [10][11][12][13][14][15] and the results, most especially for NiFe, are in good agreement with experimental results [10].…”

Section: Introductionmentioning

confidence: 83%

Applying computational nanomaterials design to the reactive ion etching of NiO thin films—a preliminary investigation

David¹,

Muhida²,

Roman³

et al. 2007

J. Phys.: Condens. Matter

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We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g. NH(3), CH(4)). We strongly suggest the use of CH(4) or any H-based gas source other than CHF(3) to enhance RIE process.

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“…[6][7][8] Currently, the etching of MTJ-related materials using conventional reactive ion etching (RIE) methods incurs problems in STT-MRAM device fabrication such as low etch selectivity with hard mask, etch damage, and redeposition of etch residue on the sidewall of the etched MTJ feature, etc. [9][10][11][12] To alleviate these etch related problems during the etching of MTJ materials, many people have intensively investigated various methods to increase the volatility of etch residue during the etching, thus improving the etch characteristics of MTJ materials. [13][14][15][16] Various etch gases that possibly form volatile etch compounds with MTJ-related materials have been studied by some research groups to improve the etch selectivity and etch profile.…”

Section: Introductionmentioning

confidence: 99%

Etching of Magnetic Tunnel Junction Materials Using Reactive Ion Beam

Hwan¹,

Chae²,

Woo³

et al. 2016

j nanosci nanotechnol

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Magnetic tunnel junction (MTJ) materials such as CoPt, CoFeB, and MgO and the hard mask material such as W were etched with a reactive ion beam system using Ar, NF 3 , CH 3 OH, and CO/NH 3 as etch gases. The effects of etch gas and the energy of the ion beam on the etch characteristics were then investigated. When the MTJ materials were etched with an Ar ion beam, the etch selectivities of the MTJ materials over W and the etch profiles of the etched MTJ patterns masked with W were generally poor, possibly due to the nonselective etching, physical sputtering without chemical reaction, and severe redeposition of the nonvolatile etch residues on the sidewall of the etched features. The use of NF 3 → CH 3 OH → CO/NH 3 reactive ion beam showed better etch selectivities over W and better etch profiles due to the higher etch selectivities of MTJ materials over W and less sidewall deposition. For reactive gases such as CH 3 OH and CO/NH 3 , the use of higher ion energy by increasing the 1st grid voltage of the ion beam up to +250 V also improved the MTJ etch profiles, possibly due to the increased effective chemical assisted physical sputtering of the etch products and the minimization of sidewall etch residues by removing etch products more effectively.

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Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma

Cited by 5 publications

References 4 publications

Pd/Alumina Catalysts for Beneficial Transformation of Harmful Freon R-22

Pd/Alumina Catalysts for Beneficial Transformation of Harmful Freon R-22

Applying computational nanomaterials design to the reactive ion etching of NiO thin films—a preliminary investigation

Etching of Magnetic Tunnel Junction Materials Using Reactive Ion Beam

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