1988
DOI: 10.1063/1.99321
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Reactive ion beam etching of Y-Ba-Cu-O superconductors

Abstract: It has been found that a reactive ion beam etching (RIBE) using Cl2 gas is useful for microfabrication of Y-Ba-Cu-O superconductors. The etching yield enhancement of Y-Ba-Cu-O is observed for Cl2 RIBE. The etching yield of Y-Ba-Cu-O at 400 V accelerating voltage, 2×10−3 Torr Cl2 pressure for Cl2 RIBE is 2, which is twice that for Ar ion beam etching. Y-Ba-Cu-O submicron patterns have been fabricated by focused ion beam lithography and Cl2 RIBE. Moreover, a Y-Ba-Cu-O superconducting line with a 4-μm linewidth h… Show more

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Cited by 64 publications
(3 citation statements)
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“…Post-deposition patterning has commonly been obtained using wet-chemical etching of the oxide in solutions of bromine in ethanol, [6] ethylenediaminetetraacetic acid (EDTA), [7] phosphoric acid [8] a significant increase in the high-frequency surface resistance as well as to cause insulating dead layers and a change in the surface morphology at the exposed surfaces. [10] Physical etching methods such as reactive ion etching [11], focused ion beam etching [12], and pulsed laser etching [13] have also been used to pattern complex oxide microstructures. However, these methods can cause physical damage to the exposed surfaces of the thin film.…”
mentioning
confidence: 99%
“…Post-deposition patterning has commonly been obtained using wet-chemical etching of the oxide in solutions of bromine in ethanol, [6] ethylenediaminetetraacetic acid (EDTA), [7] phosphoric acid [8] a significant increase in the high-frequency surface resistance as well as to cause insulating dead layers and a change in the surface morphology at the exposed surfaces. [10] Physical etching methods such as reactive ion etching [11], focused ion beam etching [12], and pulsed laser etching [13] have also been used to pattern complex oxide microstructures. However, these methods can cause physical damage to the exposed surfaces of the thin film.…”
mentioning
confidence: 99%
“…Reactive ion-beam etching with Cl has been demonstrated as an effective means for removing material (119), and ion implantation can be used to pattern the films by creating normal regions through damage (120). This latter technique has been used to make some of the first thin-film electronic devices in these materials (87).…”
Section: Thin-film Fabricationmentioning
confidence: 99%
“…In the present work, we have prepared the Bi-Sr-Ca-Cu-O film by diffusion of a metallic Bi into the Sr2CazCu4Oy substrates. This method provides an easy pattern formation by using a mask and comparing it with the patterning of high T~ superconducting films usually including resist lithography followed by wet or dry etching for pattern transfer (Matsui et al 1988;Shih and Qiu 1988;Tsuge et al 1988;Harriott et al 1989).…”
mentioning
confidence: 99%