Reactive film preparation

Weißmantel, C.

doi:10.1016/0040-6090(76)90545-9

Cited by 80 publications

(9 citation statements)

References 16 publications

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“…For low values of V, giving nearly stoichiometric SigN4 layers, the balance we can make for deposited silicon and incorporated nitrogen--,--0.5 Si and ~ 0.6 N atoms for one N2 + ion--is in good agreement with the formal equation proposed by Weissmantel (13) for a sputtering yield of 0.48.…”

Section: Sisupporting

confidence: 59%

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Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering

Bouchier¹,

Gautherin²,

Schwebel³

et al. 1983

J. Electrochem. Soc.

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The deposition mechanism of reactive ion beam sputtered silicon nitride was studied. Using RBS analysis, the composition of SixN~ layers deposited at room temperature has been investigated as a function of different parameters. Irrespective of the nitrogen partial pressure, ranging from 10 _4 to 0.2 Pa, the stoichiometry of the film depends only on the sputtering yield of silicon in the range 0.4-20 keV. Si3N4 layers can be obtained at low voltage, but only with a low deposition rate (typically I nm/min at our experimental conditions). In order to obtain Si3N4 films with higher deposition rates, we increased the nitridation of deposited silicon, either by introducing in the deposition chamber a highly reactive molecule such as NH3, or by using electronic bombardment, which stimulates the adsorption of N2 on the growing film.

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Section: Sisupporting

confidence: 59%

“…This was Paper 37~ presented at the Denver, Colorado, Meeting of the Society, Oct. [11][12][13][14][15][16] 1981.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering

Bouchier¹,

Gautherin²,

Schwebel³

et al. 1983

J. Electrochem. Soc.

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“…Synthesis of noble metal nanoparticles or surface nanostructuring of thin film is the important class of nanotechnology because of their potential applications in thin film technology and nanoelectronic [1,2]. There are various ion beam techniques to synthesize nanomaterials such as ion implantation [3], ion beam assisted deposition (IBAD) [4], ion beam sputtering (IBS) [1] and ion beam mixing (IBM) [5] etc. Ion beam irradiation in case of bilayer thin films may induce surface nanostructuring and at the same time, mixing can take place introducing embedded nanoparticles in the matrix forming nanocomposite [6].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Au nanoparticles at the surface and embedded in carbonaceous matrix by 150 keV Ar ion irradiation

Prakash¹,

Tripathi²,

Rigato³

et al. 2011

J. Phys. D: Appl. Phys.

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We report on synthesis of spherical Au nanoparticles at the surface and embedded in carbonaceous matrix by 150 keV Ar ion irradiation of thin Au film on polyethyleneterepthlate (PET). The pristine and irradiated samples are characterized by Rutherford backscattering spectrometry (RBS), atomic force microscopy, scanning electron microscopy and transmission electron microscopy (TEM) techniques. RBS spectra reveal the sputtering of Au film and interface mixing, increasing with increasing fluence. Surface morphology shows that at the fluence of 5 × 1015 ions cm−2, dewetting of thin Au film begins and partially connected nanostructures are formed whereas, at the higher fluence of 5 × 1016 ions cm−2, isolated spherical Au nanoparticles (45 ± 20 nm) are formed at the surface. Cross-sectional TEM observations also evidence the Au nanoparticles at the surface and mixed metal–polymer region indicating the formation of nanocomposites with small Au nanoparticles. The results are explained by the crater formation, sputtering followed by dewetting of the thin Au film and interdiffusion at the interface, through molten zones due to thermal spike induced by Ar ions.

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“…The refractive index of the film decreased continuously and was varied from 2.8 to 1.96. 15,[21][22][23][24][25][26][27][28][29][30][31][32] Radio-frequency ͑rf͒ reactive sputtering [21][22][23][24][25][26][27][28][29][30][31][32] can be used effectively to tailor the film properties. This method is well suited for fabricating multilayer structures of silicon nitride films with different refractive indices.…”

mentioning

confidence: 99%