Reactions of XeF2 with thermally grown SiO2

Joyce, Stephen A.; Langan, J.G.; Steinfeld, J. I.

doi:10.1016/0039-6028(88)90796-0

Cited by 24 publications

(4 citation statements)

References 37 publications

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“…An F ls binding energy value from 685.8 to 685.9 eV was detected after the HF<g~ process only. XPS analysis and molecular-orbital model calculations were used to identify silicon oxyfluorides and silicon fluorides after exposing thermal SiO2 to XeF2 (39). 5.…”

Section: Discussionmentioning

confidence: 99%

“…Nuclear magnetic resonance (NMR) studies of fluorine in silicate glass have identified silicon mono and difluorides randomly substituted into oxygen sites of the silica network (38). XPS analysis and molecular-orbital model calculations were used to identify silicon oxyfluorides and silicon fluorides after exposing thermal SiO2 to XeF2 (39). The variance in the 687.2-687.6 eV binding energy may be due to band bending resulting from charge separation in the near surface region.…”

Section: Discussionmentioning

confidence: 99%

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XPS and SIMS Study of Anhydrous HF and UV/Ozone‐Modified Silicon (100) Surfaces

Zazzera

Moulder

1989

J. Electrochem. Soc.

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X-ray photoelectron spectroscopy and secondary ion mass spectrometry are used to study the surface chemistry of silicon single-crystal wafers. Anhydrous HF and UV/ozone processes modify the surface chemistry by altering the concentration and bonding environments of the most abundant surface atoms: Si, O, C, H, and F. Anhydrous HF in conjunction with water vapor [HF(g)] removes the silicon native oxide. Native oxides with initial thicknesses of 1 lfi~, four monolayers, are exposed to a HF(g)-H~O rinse, HF~g), and an aqueous HF-H20 rinse and are reduced to 0.4, 0.2, and 0.1 monolayers, respectively. The carbon concentration exhibits an inverse relationship with the submonolayer oxide coverage. The HF(g) process results in less than a monolayer of silicon fluorides. The silicon fluoride species decrease with air exposure resulting in mostly oxyfluorides after lh. Rinsing the fluorinated surface with H20 reduces the fluorine concentration, removes trace metal impurities initially bonded to the native oxide, and promotes initial S iO2 formation. UV/ozone exposure reduces the hydrocarbon concentration on the HF-etched surface while producing 8A, three monolayers, of SiO2. Exposing the HF(g)-treated surface to UV/ozone removes the silicon fluoride species; only oxyfluorides are observed with the ozoneinduced SiO2. The cleanest silicon surface with respect to metallic and hydrocarbon impurities was achieved with a HF etch-H20 rinse-UV/ozone oxidation process.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 ABSTRACT Crystallographic faceting of unmasked monocrystalline SiC (100) thin film surfaces during plasma etching in SF6 has been observed using scanning electron microscopy. Although the faceting produced a rough surface, Auger electron spectroscopy showed it to be very chemically clean, having less native oxide than unetched SiC. The facets were determined to be {210} planes using a combination of selected area channeling and small angle tilt measurements. The facet nucleation appears to be surface sensitive and is caused by either crystal defects or compounds formed by reaction of SF6 with adsorbed gases on the sample and chamber wall. It is proposed that the subsequent facet growth is due to a surface reconstruction that causes the {210} planes to etch slower.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

XPS and SIMS Study of Anhydrous HF and UV/Ozone‐Modified Silicon (100) Surfaces

Zazzera

Moulder

1989

J. Electrochem. Soc.

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“…The fluorine coverage on silicon is proportional to CF3 dose and shows a slow increase at high exposures due to formation of a fluorinated silicon overlayer.29,91® Much less fluorine uptake occurs on silicon oxide surfaces, unless the surface is damaged prior to exposure by argon ion sputtering.30 This behavior exactly parallels that found for XeF2 on silicon oxide surfaces. 92 It should be noted that C2F6 is essentially unreactive with silicon or silicon oxide surfaces, so that the reaction of the CF3 radical can be readily observed.…”

Section: Results For Specific Systemsmentioning

confidence: 99%

Reactions of photogenerated free radicals at surfaces of electronic materials

Steinfeld¹

1989

Chem. Rev.

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“…Unfortunately, no direct proof is available in our case and oxyfluoride species are not stable at room temperature. 28 However, Joyce et al 29 speculate on the presence of such species on a thermally grown SiO 2 surface exposed to XeF 2 . Under the assumption that all O atoms are removed as O 2 F 2 , the etch rate calculated by XeF 2 consumption goes down by 50% and the etch rates are the same within the experimental error.…”

Section: Fig 4 ͑Color Online͒ ͑A͒mentioning

confidence: 99%

Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

Gevers

Beijerinck

Sanden

et al. 2008

Journal of Applied Physics

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To gain more insight into fundamental aspects of the etching behavior of Hf-based high-k materials in plasma etch reactors, HfO2 films were etched in a multiple-beam setup consisting of a low energy Ar+ ion beam and a XeF2 radical beam. The etch rate and etch products were monitored by real-time ellipsometry and mass spectrometry, respectively. Although etching of HfO2 in XeF2/Ar+ chemistry is mainly a physical effect, an unambiguous proof of the ion-radical synergistic effect for the etching of HfO2 is presented. The etch yield for 400 eV Ar+ ions at a substrate temperature of 300 °C was 0.3 atoms/ion for Ar+ sputtering and increased to 2 atoms/ion when XeF2 was also supplied. The etch yield proved to follow the common square root of ion energy dependence both for pure sputtering and radical enhanced etching, with a threshold energy at room temperature of 69±17 eV for Ar+ ions and 54±14 eV for Ar+ ions with XeF2.

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Reactions of XeF2 with thermally grown SiO2

Cited by 24 publications

References 37 publications

XPS and SIMS Study of Anhydrous HF and UV/Ozone‐Modified Silicon (100) Surfaces

XPS and SIMS Study of Anhydrous HF and UV/Ozone‐Modified Silicon (100) Surfaces

Reactions of photogenerated free radicals at surfaces of electronic materials

Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

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