Reactions of tris[bis(trimethylsilyl)amino]aluminum with ammonia and pyrolysis studies

Paciorek, K. J. L.; Nakahara, J.H.; Hoferkamp, Lisa; George, Christian; Flippen‐Anderson, Judith L.; Gilardi, Richard; Schmidt, Wayde R.

doi:10.1021/cm00013a021

Cited by 49 publications

(22 citation statements)

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“…Further transaminations may occur or there may be subsequent intramolecular eliminations of HNMe 2 groups (a-hydrogen activation). Interestingly, an analogous transamination reaction has recently been reported in the solution reaction of Al{N[Si(CH 3 ) 3 ] 2 } 3 with ammonia, 30 which yielded a dimeric species, ({[(CH 3 ) 3 Si] 2 N} 2 Al(/i -NH 2 ))2 and bistrimethylsilylamine, HN(SiMe 3 ) 2 .…”

Section: Discussionmentioning

confidence: 70%

Chemical vapor deposition of aluminum nitride thin films

1992

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The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, A1 2 (N(CH 3 )2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100-500 °C with growth rates up to 1500 A/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100-200 °C and 1.05 ± 0.05 for those deposited at 300-500 °C. Films deposited at 100-200 °C had refractive indexes in the range 1.65-1.80 whereas indexes for films deposited at 300-400 °C were 1.86-2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100-200 °C were amorphous whereas those deposited at 300-500 °C were poly crystalline.

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Section: Discussionmentioning

confidence: 70%

Chemical vapor deposition of aluminum nitride thin films

1992

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“…There are similar Al(III) complexes known with a -N(H)SiMe 3 bridge, for example, {Cl 2 Al[μ-N(H)(SiMe 3 )]} 2 (Schmidbaur and Schmidt, 1962;Riedel et al, 1991), {Me 2 Al[μ-N(H)(SiMe 3 )]} 2 (Schmidbaur and Schmidt, 1962;Choquette et al, 1992), and {(SiMe 3 ) 2 Al[μ-N(H)(SiMe 3 )]} 2 (Janik et al, 1993). Table 3 gives a comparative summary of selected bond lengths and angles of these compounds together with 3a and {[(SiMe 3 ) 2 N] 2 Al(μ-NH 2 )} 2 (Paciorek et al, 1991). All these complexes exhibit an almost square planar Al-N-Al-N core.…”

Section: Resultsmentioning

confidence: 99%

“…Unfortunately, none of these compounds could be identified yet. Cowley et al were Brought to you by | Universitaet Giessen Authenticated Download Date | 6/11/15 10:06 AM (Schmidbaur and Schmidt, 1962;Riedel et al, 1991), {Me 2 Al[μ-N(H)(SiMe 3 )]} 2 (Schmidbaur and Schmidt, 1962;Choquette et al, 1992), {(SiMe 3 ) 2 Al[μ-N(H)(SiMe 3 )]} 2 (Janik et al, 1993), and {[(SiMe 3 ) 2 N] 2 Al(μ-NH 2 )} 2 (Paciorek et al, 1991).…”

Section: Resultsmentioning

confidence: 99%

Unusual reaction pathways of gallium(III) silylamide complexes

Koenig

Gerstberger

Schaedle

et al. 2013

Main Group Metal Chemistry

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The synthesis of homoleptic gallium(III) bis(dimethylsilyl)amide Ga[N(SiHMe 2 ) 2 ] 3 was attempted via different pathways. A transsilylamination protocol using Ga[N(SiMe 3 ) 2 ] 3 and HN(SiHMe 2 ) 2 was unsuccessfully applied. An unexpected side product, MeGa[N(SiMe 3 ) SiMe 2 N(SiMe 3 ) 2 ] 2 , could be obtained from the synthesis of homoleptic gallium(III) bis(trimethylsilyl)amide via GaCl 3 and LiN(SiMe 3 ) 2 . Alkane elimination from Me 3 Ga or Et 3 Ga and HN(SiHMe 2 ) 2 did not lead to the isolation of Ga[N(SiHMe 2 ) 2 ] 3 either. When a salt metathesis route was conducted, reacting GaCl 3 with LiN(SiHMe 2 ) 2 , the silylamido-bridged dimeric hydride complex {H 2 Ga[μ-N(SiHMe 2 ) 2 ]} 2 was obtained. Its further reaction with N,N,N′,N′-tetramethylethylendiamine (tmeda) gave the dinuclear, tmeda-bridged {[H 2 GaN(SiHMe 2 ) 2 ] 2 (μ-tmeda)}.

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“…The advantage of this approach is the preparation of near-net shape products [4,5] with a high purity, or the preparation of homogeneous multinary materials. Many ceramics have been fabricated by a polymerceramic conversion approach, for example SiC [6,7], SiCN [8][9][10], SiCO [11,12], SiAlCO [13,14], SiAlCN [15][16][17][18][19][20], SiBCN [21][22][23][24][25], SiTiCN [26], SiFeCN [27,28], SiYCN [29] and SiBCNAl [30]. Among these materials, polycarbosilane-derived amorphous SiC can be converted into nanocrystalline SiC at 1200°C under a protective atmosphere [7,31].…”

Section: Introductionmentioning

confidence: 99%