Reaction thickness between diamond and silicon under 5 GPa

Lu, Zongqing; Li, Yuanyuan; Tian, Yi; Wang, Junpu; Wang, Yipeng; Zhang, Jiawei; Peng, Bo; Huang, Mengyang; Zhou, Li; He, Duanwei

doi:10.1016/j.diamond.2021.108372

Cited by 2 publications

(2 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The wettability of diamond and silicon is particularly good, 13 which forms a good bonding interface in diamond/SiC composites. 2,14,15 The coefficient of thermal expansion at low temperatures also matches that of silicon. Diamond/SiC composites exhibit a high thermal conductivity, low thermal expansion coefficient, low density, high strength and hardness, good corrosion resistance, excellent thermal shock resistance, and chemical stability.…”

Section: Introductionmentioning

confidence: 67%

See 1 more Smart Citation

Effect of infiltration temperature on graphitization and properties of diamond/SiC composites with SiC matrix

Hong,

Chen,

Liu

et al. 2024

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

In this study, diamond/silicon carbide (SiC) composites were prepared by liquid Si infiltration. The effects of the infiltration temperature on the densification, diamond graphitization, and thermal conductivity of the composites were investigated. The effects of the diamond content on the thermal conductivity and bending strength were also explored. X‐ray diffraction and Raman spectroscopy detected diamond graphitization at an infiltration temperature of 1480°C. Almost no graphitized diamond was observed due to reactions between silicon and carbon to form SiC at infiltration temperatures higher than 1480°C. As the infiltration temperature increased, graphitized diamond was consumed, and the thermal conductivity of the composite rose. The thermal conductivity and bending strength of the composites depended on the diamond content, reaching values of 257 W/m K and 237 MPa, respectively, for the sample with a diamond content of 17.9 vol.%. The higher bending strength was mainly ascribed to the high diamond content and well‐bonded interface.

show abstract

Section: Introductionmentioning

confidence: 67%

“…Both diamond and SiC have cubic structures and good interfacial wettability. The wettability of diamond and silicon is particularly good, 13 which forms a good bonding interface in diamond/SiC composites 2,14,15 . The coefficient of thermal expansion at low temperatures also matches that of silicon.…”

Section: Introductionmentioning

confidence: 91%