2020
DOI: 10.1021/acs.jpcc.0c09284
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Reaction Pathways for Atomic Layer Deposition with Lithium Hexamethyl Disilazide, Trimethyl Phosphate, and Oxygen Plasma

Abstract: Atomic layer deposition (ALD) of lithium-containing films is of interest for the development of next-generation energy storage devices. Lithium hexamethyl disilazide (LiHMDS) is an established precursor to grow this type of films. The LiHMDS molecule can either be used as a single-source precursor molecule for lithium, or as a dual-source precursor molecule for lithium and silicon. Single-source behaviour of LiHMDS is observed in the deposition process with trimethylphosphate (TMP) resulting in the deposition … Show more

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Cited by 5 publications
(11 citation statements)
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“…However, as we showed in ref. 22, there are no OH groups at the surface in this process (see also Fig. 3a).…”
Section: Resultsmentioning
confidence: 87%
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“…However, as we showed in ref. 22, there are no OH groups at the surface in this process (see also Fig. 3a).…”
Section: Resultsmentioning
confidence: 87%
“…As a reference, saturation curves for the LiHMDS–TMP process described in ref. 18 and 22 were also measured and are displayed in Fig. 1d and e.…”
Section: Resultsmentioning
confidence: 99%
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“…The Si incorporation in the film could be precisely controlled by the utilization of plasma-enhanced ALD. [33] However, this mechanism is an undesired side reaction for the here applied thermal ALD. The increased amount of incorporated Si in the deposited film could explain the higher GPCs in process regime III.…”
Section: Ald Process Development Of LI 4 Ti 5 O 12mentioning
confidence: 98%