Reaction of Terfenol-D melts with SiO2 crucibles

Kwon, Young-Dong; Kwon, Oh‐Seung; Kim, Min-chul; Wee, Dang-Moon

doi:10.1016/j.mseb.2005.12.009

Cited by 7 publications

(4 citation statements)

References 12 publications

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“…Temperature dependent dielectric and piezoelectric properties Figure 7 presents the dielectric behaviors measured at 100 kHz as a function of temperature for CaNdGa 3 O 7 , Ca 2 Ga 2 SiO 7 , and Ca 2 MgSi 2 O 7 crystals. As observed in the inset of Figure 7(a), the relative permittivity e T 11 =e 0 of CaNdGa 3 O 7 was found to increase markedly over the temperature range of 25-300 C, whereas the relative permittivities of the other two crystals increase slightly over the range of 25-500 C. From Figure 7(a), all temperature coefficients of permittivity (TCe) were found to be positive, which can be explained based on the value of dielectric permittivity and dielectric loss using the modified Clausius-Mosotti equation 24,25 TCe…”

Section: Temperature Dependent Electrical Resistivitymentioning

confidence: 90%

“…24,25 For materials with relative permittivities of 2.5 < e ii /e 0 < 10, ionic and electronic polarizability are comparable, and the TCe possesses a negative value if electronic polarizability dominating, and a positive value if ionic polarizability dominating, so the positive TCe of Ca 2 Ga 2 SiO 7 and Ca 2 MgSi 2 O 7 crystals with 2.5 < e 33 /e 0 < 10 was dominated by the ionic polarizability. For materials with relative permittivities e 33 /e 0 !…”

Section: Temperature Dependent Electrical Resistivitymentioning

confidence: 99%

“…TCe decreased with increasing dielectric permittivity and shifts negatively when permittivity increased to beyond a certain value. 24,25 For materials with relative permittivities e 33 /e 0 ! 10 and high dielectric loss tand > 0.1%, the TCe was dominated by dielectric loss and can be calculated by the following formula: 24,25 TCe ¼ 0:05 tan d-ae:…”

Section: Temperature Dependent Electrical Resistivitymentioning

confidence: 99%

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Thermal and electromechanical properties of melilite-type piezoelectric single crystals

Shen

Zhang

Cao

et al. 2015

Journal of Applied Physics

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Melilite-type crystals, including Ca2Ga2SiO7, Ca2MgSi2O7, and CaNdGa3O7, were successfully grown by the Czochralski technique. Thermal properties were investigated and full matrices of electromechanical constants of these melilite crystals were evaluated by impedance method, with d14 being on the order of 5.3-9.3 pC/N. The relationship between microstructure and electromechanical properties of the three kinds of crystals was established, in order to explore the piezoelectric origin and further optimize the piezoelectric properties. The distortion of eight-fold antiprisms and the distortion/rotation of tetrahedrons were thought to contribute to the piezoelectric d14 and d36, respectively. In addition, the layered structure leads to strong anisotropic behavior, accounts for the high resistivity along Z direction in Ca2MgSi2O7, while the disordered structure accounts for the degraded resistivity in CaNdGa3O7. The properties at elevated temperature were investigated, where the elastic constants show high thermal stability over the range of 25-500 C, with minimal variation of 6%. Publication DetailsShen, C., Zhang, S., Cao, W. Melilite-type crystals, including Ca 2 Ga 2 SiO 7 , Ca 2 MgSi 2 O 7 , and CaNdGa 3 O 7 , were successfully grown by the Czochralski technique. Thermal properties were investigated and full matrices of electromechanical constants of these melilite crystals were evaluated by impedance method, with d 14 being on the order of 5.3-9.3 pC/N. The relationship between microstructure and electromechanical properties of the three kinds of crystals was established, in order to explore the piezoelectric origin and further optimize the piezoelectric properties. The distortion of eight-fold antiprisms and the distortion/rotation of tetrahedrons were thought to contribute to the piezoelectric d 14 and d 36 , respectively. In addition, the layered structure leads to strong anisotropic behavior, accounts for the high resistivity along Z direction in Ca 2 MgSi 2 O 7 , while the disordered structure accounts for the degraded resistivity in CaNdGa 3 O 7 . The properties at elevated temperature were investigated, where the elastic constants show high thermal stability over the range of 25-500 C, with minimal variation of 6%. V C 2015 AIP Publishing LLC. [http://dx

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Section: Temperature Dependent Electrical Resistivitymentioning

confidence: 90%

Section: Temperature Dependent Electrical Resistivitymentioning

confidence: 99%

Section: Temperature Dependent Electrical Resistivitymentioning

confidence: 99%

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Thermal and electromechanical properties of melilite-type piezoelectric single crystals

Shen

Zhang

Cao

et al. 2015

Journal of Applied Physics

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show abstract

“…The dielectric permittivity is closely associated with the electronic (the shifts of electron cloud) and ionic (the motions of cations and anions) polarization for simple inorganic materials. For SrLaGa 3 O 7 and BaLaGa 3 O 7 crystals with positive temperature coefficients of permittivity (TCߝ), the ionic polarization dominates [30,32]. As shown in the inset of Fig.…”

Section: Temperature Dependent Dielectric and Piezoelectric Propertiesmentioning

confidence: 99%

Dielectric, elastic and piezoelectric properties of SrLaGa3O7 and BaLaGa3O7 crystals with Melilite structure

Shen

Zhang

et al. 2015

Journal of Alloys and Compounds

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Recent progress in impurity removal during rare earth element processing: A review

Judge

Azimi

2020

Hydrometallurgy

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Reaction of Terfenol-D melts with SiO2 crucibles

Cited by 7 publications

References 12 publications

Thermal and electromechanical properties of melilite-type piezoelectric single crystals

Thermal and electromechanical properties of melilite-type piezoelectric single crystals

Dielectric, elastic and piezoelectric properties of SrLaGa3O7 and BaLaGa3O7 crystals with Melilite structure

Recent progress in impurity removal during rare earth element processing: A review

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