Reaction of Sb on In/Si(111) surfaces: Heteroepitaxial InSb(111) formation

Hashimoto, M.; Nakaguchi, A.; Guo, Fang; Ueda, Michihisa; Yasue, Tsuneo; Matsushita, Teruo; Kinoshita, Toshihiro; Kobayashi, Kenichi; Oura, M.; Takeuchi, Tomoyuki; Saito, Y.; Shin, Sung-Chill; Koshikawa, Takanori

doi:10.1016/j.susc.2015.05.025

Surface Science

2015

DOI: 10.1016/j.susc.2015.05.025

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Reaction of Sb on In/Si(111) surfaces: Heteroepitaxial InSb(111) formation

M. Hashimoto

A. Nakaguchi

Fang Guo

et al.

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“…This is the 2D (In, Sb)-2 × The 2D In−Sb compound can be fabricated on Si(111) using room temperature (RT) deposition of Sb onto the preformed In/Si(111) surfaces followed by annealing at about 500 °C. 32,33 The In/Si(111) surfaces might be either the quasihexagonal hex-× 7…”

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Two-Dimensional In–Sb Compound on Silicon as a Quantum Spin Hall Insulator

et al. 2018

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Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing realization of the quantum spin Hall effect. Searching for two-dimensional realistic materials that are able to provide the quantum spin Hall effect and possessing the feasibility of their experimental preparation is a growing field. Here we report on the two-dimensional (In, Sb)2[Formula: see text]2[Formula: see text] compound synthesized on Si(111) substrate and its comprehensive experimental and theoretical investigations based on an atomic-scale characterization by using scanning tunneling microscopy and angle-resolved photoelectron spectroscopy as well as ab initio density functional theory calculations identifying the synthesized 2D compound as a suitable system for realization of the quantum spin Hall effect without additional functionalization like chemical adsorption, applying strain, or gating.

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Two-Dimensional In–Sb Compound on Silicon as a Quantum Spin Hall Insulator

et al. 2018

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The array of In-Bi heterodimers on the Si(100) surface

et al. 2020

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Reaction of Sb on In/Si(111) surfaces: Heteroepitaxial InSb(111) formation

Cited by 2 publications

References 15 publications

Two-Dimensional In–Sb Compound on Silicon as a Quantum Spin Hall Insulator

Two-Dimensional In–Sb Compound on Silicon as a Quantum Spin Hall Insulator

The array of In-Bi heterodimers on the Si(100) surface

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