Reaction Mechanism Studies on Atomic Layer Deposition of Ruthenium and Platinum

Aaltonen, Titta; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku

doi:10.1149/1.1595312

Cited by 221 publications

(296 citation statements)

References 13 publications

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“…where R is the ideal gas constant, Similar behaviors were also observed in ALD Ru film depositions from Ru(thd) 3 , [6] RuCp 2 [4,5] and Ru(EtCp) 2.…”

Section: Resultssupporting

confidence: 70%

“…The Saturation of the growth rate with increasing temperature was also observed for the Ru(thd) 3 and RuCp 2 systems, which suggests these ALD processes follow a reaction mechanism similar to the one discussed by T. Aaltonen et al: Ru films are deposited by oxidizing the precursor ligands with dissociatively adsorbed oxygen from the subsurface region. [4,6] The resistivity is near 10 ·cm for deposition temperatures from 320 The film resistivity was calculated from the thickness measured by X-ray reflectivity (XRR) (Scintag XDS2000) multiplying the sheet resistance measured by a four-point probe. The morphology was studied by scanning electron microscope (Zeiss FESEM Ultra55) and atomic force microscopy (Asylum MFP-3D).…”

Section: Resultsmentioning

confidence: 99%

“…The cyclopentadienyl (Cp) compounds, such as RuCp 2 and Ru(EtCp) 2 , [2,4,5] and the tris--diketonates (thd) compounds, such as Ru(thd) 3 , [6] have been studied with O 2 as co-reactant. The ruthenium amidinate precursor, bis(N,N'-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl, has been synthesized in our group and used to deposit ruthenium thin films with or without NH 3 as co-reactant.…”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Wang

Gordon

Alvis³

et al. 2009

Chemical Vapor Deposition

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Ruthenium thin films were deposited by atomic layer deposition from bis(N,N'-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O 2 . Highly conductive, dense and pure thin films can be deposited when oxygen exposure O E approaches a certain, the film peels off due to the recombinative desorption of O 2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5at.%) is segregated near the grain boundaries. The atom probe microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries.3

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“…where R is the ideal gas constant, Similar behaviors were also observed in ALD Ru film depositions from Ru(thd) 3 , [6] RuCp 2 [4,5] and Ru(EtCp) 2.…”

Section: Resultssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Wang

Gordon

Alvis³

et al. 2009

Chemical Vapor Deposition

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“…On the substrate material no growth should take place, in other words, the ALD surface reactions should occur selectively on the EBID seed layer. For combinatorial EBID-ALD of Pt nanostructures, the thermal ALD process of Pt from ͑methylcyclopentadienyl͒-trimethylplatinum ͑MeCpPtMe 3 ͒ and O 2 dosing as studied by Aaltonen et al 13 and Kessels et al 14 was adopted. In this process, oxygen atoms are created at Pt surfaces by dissociative chemisorption reactions of O 2 and these oxygen atoms oxidatively decompose MeCpPtMe 3 molecules when these are exposed to the surface.…”

mentioning

confidence: 99%

“…In this process, oxygen atoms are created at Pt surfaces by dissociative chemisorption reactions of O 2 and these oxygen atoms oxidatively decompose MeCpPtMe 3 molecules when these are exposed to the surface. 13,14 The dissociative chemisorption of O 2 is strongly surface dependent as well as sensitive to the operating conditions ͑i.e., temperature and pressure͒, and this property can be exploited to obtain area-selective deposition. In case O 2 pressures below 0.1 Torr are employed, an extremely long nucleation delay takes places on an oxide substrate, while growth quickly initiates on a Pt covered surface.…”

mentioning

confidence: 99%

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

Mackus

Mulders²,

Sanden

et al. 2010

Journal of Applied Physics

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policy If you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition ͑EBID͒ with area-selective deposition of high quality material by atomic layer deposition ͑ALD͒. Because virtually pure, polycrystalline Pt nanostructures are obtained, the method extends the application possibilities of EBID, whereas compared to other area-selective ALD approaches, a much higher resolution is attainable; potentially down to sub-10 nm lateral dimensions.

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Metals

2013

Atomic Layer Deposition

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Reaction Mechanism Studies on Atomic Layer Deposition of Ruthenium and Platinum

Cited by 221 publications

References 13 publications

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

Metals

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