Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

Abstract

In this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

In Situ Remote H‐Plasma Cleaning of Patterned Si ‐ SiO2 Surfaces

“…The process sequence is typically an RCA (or HF-based) wet chemical clean followed by an in situ H-plasma clean. [2][3][4][5][6][7][8][9] In another related study it was demonstrated that an electron cyclotron resonance (ECR) H-plasma exposure can be effective without a requiring a wet chemical preparation. 1~ Comparing the Auger electron spectroscopy (AES) data before and after H-plasma exposure, the resulting surface exhibits reduced concentrations of carbon and oxygen.…”

(Invited) Rapid In-Situ Carbon and Oxygen Cleaning of In0.53Ga0.47As(001) and Si0.5Ge0.5(110) Surfaces via a H2 RF Downstream Plasma

“…However, the wet processes can leave organic residues and a thin layer of native oxide on the surface due to exposure to ambient conditions, while the vacuum/dry processing steps can take over 30 minutes to perform. One technique, which overcomes this issue, involves the use of an in-situ plasma source to remove carbon and oxygen present on the surface (6).…”