“…9,37 For the reaction mechanism, conflicting interpretations are available. Some authors reported continuous reaction product layers at the interface between C and Si that appeared to grow by a diffusion-controlled process; 34,35 no such continuous product layer was found by others [38][39][40] and it was suggested that the reaction product quickly spalled owing to volume misfit between SiC and C, leading to an interface-controlled reaction directly between Si and C. The other mechanism suggests repeating steps of dissolution of C in liquid Si followed by precipitation of SiC from supersaturated solution of C in Si, occur as the reaction front moves. [41][42][43][44] The solution-precipitation and interface-controlled mechanisms have similarity with regard to linear dependence of reaction rate on carbon solubility in Si, the C-Si reaction being assumed to be of first order with respect to C concentration.…”