Reaction-diffusion mechanisms for the chemical shrink process of nanofabrication

Li, Tsung-Lung; Ting, Jyh-Hua

doi:10.1016/j.cplett.2005.08.078

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Then, the shrinkages are calculated with one of the three activation energies of the RELACS and all activation energies of the CA resist held fixed. 29) These simulations correspond to physical cases where different RELACS materials are used with the same CA resist in the chemical shrink process.…”

Section: Effects Of Relacsmentioning

confidence: 99%

Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

Li¹,

Ting

Kung

2006

Jpn. J. Appl. Phys.

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A parallelizable simulator of the chemical shrink process of nanolithography is developed to investigate the process dependence on material properties. The chemical shrink process model employed for the simulator includes the cross-linking reaction of the resolution enhancement of lithography assisted by chemical shrink (RELACS) material, the inhibitor deprotection reaction of the chemically amplified (CA) resist, and the photoacid diffusion and trapping in the CA resist and RELACS material. It is found that, in the descending order of their effectiveness on amount of shrinkage, the photoacid trapping and diffusion mechanisms of the RELACS are the most effective ones, the photoacid trapping mechanism of the CA resist is second, the photoacid diffusion mechanism of the CA resist and the cross-linking reaction of the RELACS are third, and the deprotection reaction of the CA resist is the least effective. The interpretations of the dependence of the shrinkage amounts on these mechanisms are also provided on the basis of the simulations.

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Section: Effects Of Relacsmentioning

confidence: 99%

Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

Li¹,

Ting

Kung

2006

Jpn. J. Appl. Phys.

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“…A two-dimensional numerical simulator 2,3) that models the cross-linking reaction occurring during the mixing bake process with a set of reaction-diffusion equations is employed to calculate the shrinkage and the CD after the chemical shrink process. The simulated shrinkages for the 180, 240, 300, and 360 nm contact holes are all plotted in Figs.…”

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confidence: 99%

Comment on “Thermal Flow and Chemical Shrink Techniques for Sub-100 nm Contact Hole Fabrication in Electron Beam Lithography”

Li¹,

Ting

2006

jjap

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Simple physical model for chemomechanics

Shemesh

Stolyarova

Nemirovsky

et al. 2013

J Polym Sci B Polym Phys

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We present a simple model linking chemical interactions with macroscopic mechanical deformations for polymer-coated microcantilever devices. The chemo-mechanical process is treated in terms of Fickian diffusion followed by a structural relaxation of the polymer-guest complex. The model is tested on a series of microcantilever bending experiments, in the presence of different isotopologues, and at different incident guest fluxes. In many cases, a nontrivial behavior, expressed by the appearance of an overshoot, is observed. The new model provides insight into the ways chemical interactions and reorganization processes manifest themselves in mechanical processes.

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Reaction-diffusion mechanisms for the chemical shrink process of nanofabrication

Cited by 3 publications

References 15 publications

Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

Comment on “Thermal Flow and Chemical Shrink Techniques for Sub-100 nm Contact Hole Fabrication in Electron Beam Lithography”

Simple physical model for chemomechanics

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