Reaction constants for main cationic native defects in narrow-gap Hg1−Cd Te crystals

Bogoboyashchyy, V. V.; Kurbanov, K.

doi:10.1016/j.jallcom.2003.06.010

Cited by 7 publications

(6 citation statements)

References 8 publications

(19 reference statements)

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“…After the growth, the wafers were annealed at 410 • C in Hg vapours to obtain ptype conductivity with a mercury vacancy concentration of ∼10 16 cm −3 . The vacancy concentration was determined by measuring the hole concentration at 77 K and calculated with consideration for the degree of vacancy ionization as depending on their concentration and alloy composition [16,17].…”

Section: Methodsmentioning

confidence: 99%

“…On the one hand, the energy of one ion with E i ∼ 1 keV is enough to heat ∼10 −19 cm 3 of MCT crystal up to the melting point [6]. On the other hand, this energy suffices to form a few hundreds of mercury interstitial atomvacancy pairs, as the energy of such a pair formation in narrow bandgap MCT is ∼2.3 eV [17]. Suggesting that the amount of energy spent on defect formation is close to that transferred into heat, we shall find that the initial density of Frenkel's pairs in the damaged area does not depend on E i and equals ∼10 21 cm −3 .…”

Section: Formation Of Mercury Diffusion Sourcementioning

confidence: 99%

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The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Bogoboyashchyy

Іжнін

Mynbaev

2005

Semicond. Sci. Technol.

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The dependence of conductivity-type conversion depth in vacancy-doped Hg 1−x Cd x Te (MCT) alloys subjected to ion milling on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that both in compositionally homogeneous crystals and in samples with a wide bandgap protective layer the dependence is defined by internal electric fields, which affect the diffusion of mercury interstitial atoms that are generated during the treatment. Results of the calculation of the effect of the potentials of a p-n junction formed by ion milling and of a varyband structure field (in samples with the protective layer) on the conversion depth fit both the original experimental data and those taken from the literature well. The data obtained confirms the validity of the diffusion model of the formation of the excessive mercury source in MCT subjected to ion milling, which was proposed by the authors previously. The results presented in the paper allow one to predict and control the conversion depth in MCT subjected to ion milling for p-n junction fabrication, which makes them useful in MCT infrared detector technology.

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Section: Methodsmentioning

confidence: 99%

Section: Formation Of Mercury Diffusion Sourcementioning

confidence: 99%

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Bogoboyashchyy

Іжнін

Mynbaev

2005

Semicond. Sci. Technol.

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“…After the growth, the samples were annealed in Hg vapours to obtain the p-type conductivity with mercury vacancy concentration of (5-10)⋅10 16 cm -3 . The vacancy concentration was determined by measuring the hole concentration at 77 K with consideration for the degree of vacancy ionisation at 77 K as depending on their concentration and alloy composition 23,24 .…”

Section: Methodsmentioning

confidence: 99%

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Іжнін¹,

Bogoboyashchyy

Sizov

2005

SPIE Proceedings

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The main features of p-n conductivity type conversion by ion milling in vacancy-doped p-Cd x Hg 1-x Te are considered. A diffusion model of the Hg interstitials source formation in MCT crystals under IM was proved through investigation of conversion depth dependence on composition. The model explains, both quantitatively and qualitatively, conversion depth dependencies on the IM temperature and the alloy composition. The most important factor, which defines these dependencies, is an electric field located at the interface between the p-type defect layer and the n-type converted layer and in the grad band region. It was demonstrated that main features of carrier distribution over the p-n structure depth remained after 10 years samples storage. The relaxation of electrical properties of the n-layer main part after IM was explained by dissociation of donor complexes and centers formed by Hg interstitials with residual I and V group acceptor impurities. It was also demonstrated that IM results in forming a complex damaged n + -layer including several sub-layers with different nature of electron conductivity. An analysis of how electrons concentration relax in the n + -layer allows interpreting the nature of conductivity in one sub-layer through trapping mercury interstitials by dislocations and dislocation loops. The conductivity relaxation in this sub-layer occurs because the structure of such defects is rebuilt, with donor properties being lost.

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“…After the growth, the wafers were annealed at 410 °C in Hg vapors to obtain p-type conductivity with the mercury vacancy concentration of 10 16 cm −3 . The vacancy concentration was determined by measuring the hole concentration at 77 K. The measurements comprised investigations of field dependences for the Hall coefficient and conductivity, as well as processing the experimental data using the Mobility Spectrum Analysis (MSA) method [14] with consideration for the degree of vacancy ionization at 77 K as depending on their concentration and alloy composition [15,16]. Parameters of the samples are given in Table. IBM milling was performed with Ar + ions possessing the energy 500 eV, ion current density j = 0.2 mA/cm 2 and treatment duration t = 200 s. The temperature of the samples during IBM was either 293 K (water cooling of sample holder) or 345…350 K (no cooling).…”

Section: Methodsmentioning

confidence: 99%

“…. Calculations were performed using the empirical data from [19] for the density of states inherent to heavy holes N V : [12] for vacancy-doped CMT (x = 0.21) with the hole concentration 1⋅10 16 (1) and 5⋅10 15 cm −3 (2) at 77 K. Line 3 presents the results of calculations by the formula (12) for x = 0.20.…”

Section: Modelingmentioning

confidence: 99%

Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg1–xTe

Іжнін¹

2005

Semicond. phys. quantum electron. optoelectron.

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The dependence of the conversion depth in Cd x Hg 1-x Te alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally homogeneous crystals the dependence is defined by internal electric fields, which affect the diffusion of charged intrinsic defects that arise as a result of the treatment. The results of calculations of the effect of the potentials of the p-n junction formed by ion-milling on the conversion depth fit well both the original experimental data and those taken from the literature. The data obtained confirm the validity of the diffusion model of the formation of the excessive mercury source in CMT subjected to ion-beam milling, which was proposed by the authors earlier. The results gained allow one to precisely predict and control the conversion depth in CMT crystals and epitaxial layers subjected to ion milling for p-n junction fabrication. This makes the results presented in the paper useful in CMT infrared detector technology.

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Reaction constants for main cationic native defects in narrow-gap Hg1−Cd Te crystals

Cited by 7 publications

References 8 publications

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg1–xTe

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