Reaction analysis of the formation of CuInSe2 films in a physical vapor deposition reactor

Abstract

The reaction kinetics for the formation of CuInSe2 films by reacting Cu/In layers with elemental selenium are compared with those for H2Se. The species mole fractions as a function of time in a single Se‐source physical vapor deposition (PVD) reactor are found to be essentially the same as those obtained in a chemical vapor deposition (CVD) reactor with flowing H2Se, indicating that the same chemical equation representation can be used in both cases. The chemical engineering reaction analysis model developed previously by us is shown to predict adequately the experimental data in both reactors. The model is employed to predict three‐source behavior. The effects of rate of species delivery and substrate temperature on the time to make CuInSe2 is presented quantitatively. © 1998 John Wiley & Sons, Ltd.

Formation reactions of chalcopyrite compounds and the role of sodium doping

“…The observed compounds and their sequences are similar to an experiment on the selenisation of a Cu 0.9 In thin film by selenium provided by an evaporation source [7]. The main difference of [7] compared to the results presented in here is that neither the compound CuSe (occurs in samples b), c) and d) nor CuSe 2 (in samples c) and d) was observed. This difference is due to the missing selenium layer on the sample prior to annealing.…”

Cu(InGa)Se 2 Solar Cells

“…These react with Se to form a series of binary compounds. The formation of CuInSe 2 then follows from 2 InSe + Cu 2 Se + Se → 2 CuInSe 2 with complete reaction in ∼15 min at 400 • C. The reaction path was shown to be the same for the reaction of Cu/In layers in either H 2 Se or elemental Se [104].…”

Steps Towards Industrialization of Cu–III–VI2Thin‐Film Solar Cells:Linking Materials/Device Designs to Process Design For Non‐stoichiometric Photovoltaic Materials

“…After we finish the CuInSe 2 defect concentration calculations, we can apply the result to the model which was developed by IEC to predict the processing time under a certain process temperature.…”