2020
DOI: 10.1103/physrevb.102.014418
|View full text |Cite
|
Sign up to set email alerts
|

Re-entrant spin reorientation transition and Griffiths-like phase in antiferromagnetic TbFe0.5Cr0.5O3

Abstract: The perovskite TbFe 0.5 Cr 0.5 O 3 shows two anomalies in its magnetic susceptibility at T N = 257 K and T SR = 190 K which are, respectively, the antiferromagnetic and spin-reorientation transition that occur in the Fe/Cr sublattice. Magnetic susceptibility of this compound reveals canonical signatures of a Griffiths-like phase: a negative deviation from the ideal Curie-Weiss law and in less-than-unity power-law susceptibility exponents. Neutron-diffraction data analysis confirms two spin-reorientation transi… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
7
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 17 publications
(7 citation statements)
references
References 59 publications
(71 reference statements)
0
7
0
Order By: Relevance
“…along with magnon modes in these crystals. 3 Dilution of Sm by Y also gives variation in the magnetic properties. The preparation of a single crystal using an optical floating zone furnace is detailed in the experimental discussion part.…”
Section: ■ Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…along with magnon modes in these crystals. 3 Dilution of Sm by Y also gives variation in the magnetic properties. The preparation of a single crystal using an optical floating zone furnace is detailed in the experimental discussion part.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Perovskite oxides (ABO 3 ) have attracted much attention in the last few decades for their wide applications in electronics, energy storage devices, and others. , On altering the cationic composition at the A or B site of the oxide sample, several interesting properties result. The properties also depend on the preparation methods and the nature of the sample (in quality, purity, and crystallinity).…”
Section: Introductionmentioning
confidence: 99%
“…GaAs, as an example, has the following benefit over Si: (i) A six times increase in electron mobility that enables quicker functioning; (ii) A wider band gap, which enables power devices to operate more faster at higher temperatures and produces less thermal noise at ambient temperatures; (iii) Its optoelectronic properties are more advantageous than those of indirect band gap Si because it has a direct band gap; (iv) For alloying, ternary and quaternary compositions are recommended. In compound semiconductors, nonmagnetic (NM), ferromagnetic (FM), antiferromag-netic (AFM) and ferrimagnetic (FIM) semiconductor are extensively studied theoretically as well as experimentally [3][4][5][6]. As a NM semiconductor transistor, bulk inversion asymmetry in (110) InAs/GaSb/AlSb heterostructures was proposed [7].…”
Section: Introductionmentioning
confidence: 99%
“…For instance, SrSn 2 Fe 4 O 11 is a FM semiconductor having a long range ferromagnetic order, finite remanence, and conductivity that falls exponentially with temperature. Materials with these qualities are intriguing for microwave devices fabrication [12] and also for optoelectronic and photovoltic applications [13,14]. The FM semiconducting material La 2 NiMnO 6 was reported to be very near to room temperature for spintronics applications.…”
Section: Introductionmentioning
confidence: 99%
“…These properties are found useful in device fabrication for technological applications. When chemical substitution is done to the B or B' site, they show additional properties relevant for spintronic devices [9][10][11][12][13][14][15]. Among many, HM is one of the important property found in DPs where one spin channel is metallic and the other one is insulating.…”
Section: Introductionmentioning
confidence: 99%