1992
DOI: 10.1002/crat.2170270226
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Raw Material synthesis for Bi2Ge3o12 Crystal Growth

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Cited by 3 publications
(4 citation statements)
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“…excitation, when an emission peak was observed at 480 nm in the BGO crystals. More probably, the emission is due to the transition 3 The experimentally pattern obtained by synthesis at 700 o C for 24 h, allows us to construct the synthesised crystalline structure of BGO and to compare with a standard XRD pattern, identifying the lattice planes of diffraction. In Fig.…”
Section: Resultsmentioning
confidence: 99%
“…excitation, when an emission peak was observed at 480 nm in the BGO crystals. More probably, the emission is due to the transition 3 The experimentally pattern obtained by synthesis at 700 o C for 24 h, allows us to construct the synthesised crystalline structure of BGO and to compare with a standard XRD pattern, identifying the lattice planes of diffraction. In Fig.…”
Section: Resultsmentioning
confidence: 99%
“…2,3) The growth of single crystals with less defects is achieved by using a single-phase BGO powder, as compositional inhomogeneity is almost impossible to reduce in a melt due to the high viscosity created. 4) As a result, the synthesis of BGO powder is an important aspect of single-crystal fabrication. [4][5][6][7][8][9][10][11] The low-temperature synthesis of single-phase BGO powder has been hindered by the fact that any significant decrease in the synthesis temperature leads to impurities even when using a sol-gel method.…”
Section: Introductionmentioning
confidence: 99%
“…4) As a result, the synthesis of BGO powder is an important aspect of single-crystal fabrication. [4][5][6][7][8][9][10][11] The low-temperature synthesis of single-phase BGO powder has been hindered by the fact that any significant decrease in the synthesis temperature leads to impurities even when using a sol-gel method. 4,[8][9][10][11] Therefore, a temperature between 1123 and 1283 K is necessary for synthesis in air.…”
Section: Introductionmentioning
confidence: 99%
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