Rational Superlattice Electron Blocking Layer Design for Boosting the Quantum Efficiency of 371 nm Ultraviolet Light-Emitting Diodes

Du, Peng; Zhao, Xiaoyu; Qian, Yinzuo; Liu, Pengfei; Tang, Bin; Shi, Liqiao; Tao, Guoyi; Zhou, Shengjun

doi:10.1109/ted.2021.3118990

Cited by 7 publications

(2 citation statements)

References 42 publications

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“…To obtain a high-quality AlN/sapphire template, several growth techniques have been investigated, including epitaxial lateral overgrowth (ELOG) technology, pendeo-epitaxy, and facet-controlled ELOG [42,43] . Employing a low-temperature (LT) GaN or AlN buffer layer is an important method to diminish the lattice mismatch between the epilayers and sapphire substrate [44][45][46][47] . Our group found that densities of both screw dislocations and edge dislocations in the GaN epilayer grown on a PSS were much less than that of the GaN epilayer grown on an FSS [48] .…”

Section: Aln/sapphire Templatementioning

confidence: 99%

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

Liu

Zhou

2022

中国光学快报

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Solar-blind ultraviolet photodetectors (SBPDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. Aluminum gallium nitride (AlGaN), a kind of representative III-nitride semiconductor, has promising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility. Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate, employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer, thereby enhancing the SBPD performances. In recent years, a variety of remarkable breakthroughs have been achieved in the SBPDs. In this paper, the progress on photovoltaic AlGaN-based SBPDs is reviewed. First, the basic physical properties of AlGaN are introduced. Then, fabrication methods and defect annihilation of the AlN/sapphire template are discussed. Various photovoltaic SBPDs are further summarized, including Schottky barrier, metal-semiconductor-metal, p-n/p-i-n and avalanche photodiodes. Furthermore, surface modification and photoelectrochemical cell techniques are introduced. Benefitting from the development of fabrication techniques and optoelectronic devices, photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.

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Section: Aln/sapphire Templatementioning

confidence: 99%

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

Liu

Zhou

2022

中国光学快报

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“…24 In addition, thin AlInGaN superlattices have also been recently reported experimentally. 25 Recently, high output AlGaN microLEDs have also been reported. 26 Researchers have also used patterned substrates as well as nucleation layers to improve ultraviolet LEDs.…”

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confidence: 99%

Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes

Rasheed

Usman

Mustafa

et al. 2023

ECS J. Solid State Sci. Technol.

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We have carried out numerical investigations of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). We have shown that the unequal carrier distribution, which is typical in III-N LEDs, is mitigated in the active region. To improve the performance, we have used a thin AlInGaN quaternary layer (QL) between the final quantum barrier (FQB) and the electron blocking layer (EBL). We have also compared the results with a staggered or step-graded electron blocking layer (EBL) which is known to shown enhanced device output. The hole insertion has been found to greatly improve in all the multiquantum wells (MQWs) of our numerically designed LEDs. The radiative recombination rate has been found to be enhanced by ~82% in comparison to reference LED.

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Effect of graded Al content in the last quantum barrier on the luminescence properties of ultraviolet InGaN/AlGaN multiple quantum wells

Liu,

Gao,

Zhang

2023

Micro and Nanostructures

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Rational Superlattice Electron Blocking Layer Design for Boosting the Quantum Efficiency of 371 nm Ultraviolet Light-Emitting Diodes

Cited by 7 publications

References 42 publications

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes

Effect of graded Al content in the last quantum barrier on the luminescence properties of ultraviolet InGaN/AlGaN multiple quantum wells

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