Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask

Bai, Jingwei; Duan, Xiangfeng; Huang, Yu

doi:10.1021/nl900531n

Cited by 371 publications

(372 citation statements)

References 36 publications

Supporting

Mentioning

357

Contrasting

Unclassified

Order By: Relevance

“…[25][26][27][28][29] In singlehydrogen-terminated armchair ribbons, however, this phenomena is absent. Despite the broad range of production techniques for graphene ribbons 10,11,17,[30][31][32][33][34][35][36][37][38][39][40][41] real control over the edge geometry and termination in them has not been achieved yet, and no atomic characterization either.…”

Section: Introductionmentioning

confidence: 99%

Clar’s Theory, π-Electron Distribution, and Geometry of Graphene Nanoribbons

et al. 2010

View full text Add to dashboard Cite

We show that Clar's theory of the aromatic sextet is a simple and powerful tool to predict the stability, the π-electron distribution, the geometry, the electronic/magnetic structure of graphene nanoribbons with different hydrogen edge terminations. We use density functional theory to obtain the equilibrium atomic positions, simulated scanning tunneling microscopy (STM) images, edge energies, band gaps, and edge-induced strains of graphene ribbons that we analyze in terms of Clar formulas. Based on their Clar representation, we propose a classification scheme for graphene ribbons that groups configurations with similar bond length alternations, STM patterns, and Raman spectra. Our simulations show how STM images and Raman spectra can be used to identify the type of edge termination.

show abstract

Section: Introductionmentioning

confidence: 99%

Clar’s Theory, π-Electron Distribution, and Geometry of Graphene Nanoribbons

et al. 2010

View full text Add to dashboard Cite

show abstract

“…Unlike freestanding nanoribbons, this architectural motif is a natural building block for next-generation nanoelectronic devices and NEMS devices as it allows controlled yet scalable device integration while minimizing deleterious substrate effects 1,4,5,[25][26][27] . The ribbons can be trimmed to shape before or after clamping them onto the end-supports (electrodes) [28][29][30][31][32][33][34][35] , and the two scenarios result in differing mechanical constraints on the ribbons, as detailed later in this article. We use stability analyses and computations to explore the morphological stability space of nanoribbons as a function of both intrinsic and engineered parameters, i.e.…”

Section: Introductionmentioning

confidence: 99%

Rippling instabilities in suspended nanoribbons

Wang

Upmanyu

2012

Phys. Rev. B

View full text Add to dashboard Cite

Morphology mediates the interplay between the structure and electronic transport in atomically thin nanoribbons such as graphene as the relaxation of edge stresses occurs preferentially via outof-plane deflections. In the case of end-supported suspended nanoribbons that we study here, past experiments and computations have identified a range of equilibrium morphologies, in particular for graphene flakes, yet a unified understanding of their relative stability remains elusive. Here, we employ atomic-scale simulations and a composite framework based on isotropic elastic plate theory to chart out the morphological stability space of suspended nanoribbons with respect to intrinsic (ribbon elasticity) and engineered (ribbon geometry) parameters, and the combination of edge and body actuation. The computations highlight a rich morphological shape space that can be naturally classified into two competing shapes, bending-like and twist-like, depending on the distribution of ripples across the interacting edges. The linearized elastic framework yields exact solutions for these rippled shapes. For compressive edge stresses, the body strain emerges as a key variable that controls their relative stability and in extreme cases stabilizes co-existing transverse ripples. Tensile edge stresses lead to dimples within the ribbon core that decay into the edges, a feature of obvious significance for stretchable nanoelectronics. The interplay between geometry and mechanics that we report should serve as a key input for quantifying the transport along these ribbons.

show abstract

“…Various strategies have been explored to fabricate field-effect transistors based on graphene or graphene nanostructures (6)(7)(8)(9)(10)(11)(12)(13). Most of these efforts to date employ a silicon substrate as a global back gate and silicon oxide as the gate dielectric, which have led to many interesting scientific discoveries, but will be of limited use for practical applications due to the high-gate switching voltage required and the inability to independently address individual devices on the same chip.…”

mentioning

confidence: 99%

High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Liao¹,

Bai

Qu³

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

Self Cite

189

158

View full text Add to dashboard Cite

Deposition of high-κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-κ dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high-κ dielectrics with graphene by first synthesizing freestanding high-κ oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al 2 O 3 nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm 2 ∕V · s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high-κ dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics.graphene dielectric integration | carrier mobility | dielectric nanoribbon | nanoelectronics G raphene has attracted considerable interest as a potential electronic material due to its exceptionally high carrier mobility and tunable band gap (1-6). Various strategies have been explored to fabricate field-effect transistors based on graphene or graphene nanostructures (6-13). Most of these efforts to date employ a silicon substrate as a global back gate and silicon oxide as the gate dielectric, which have led to many interesting scientific discoveries, but will be of limited use for practical applications due to the high-gate switching voltage required and the inability to independently address individual devices on the same chip. Top-gated devices with high-κ dielectrics can significantly reduce the required switching voltage and readily allow independently addressable device arrays and functional circuits, and therefore are of significant interest (14, 15).The gate dielectric is an essential component of a transistor, which can significantly impact the critical device parameters including transconductance, subthreshold swing and frequency response. Exploring graphene for future electronics requires effective integration of high quality gate dielectrics, in particular the high-κ dielectrics. However, it has been rather challenging to deposit oxide dielectrics onto graphene without introducing defects. The deposition of high-κ dielectrics is usually achieved using atomic layer deposition (ALD), which requires reactive surface groups (16)(17)(18)(19)(20). Functionalization of graphene surface for ALD either introduces undesired impurities or breaks the chemical bonds in the graphene lattice, inevitably leading to a significant degradation in carrier mobilities (20). Physical vapor deposition (PVD) such as electron-beam evaporation or sput...

show abstract

Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask

Cited by 371 publications

References 36 publications

Clar’s Theory, π-Electron Distribution, and Geometry of Graphene Nanoribbons

Clar’s Theory, π-Electron Distribution, and Geometry of Graphene Nanoribbons

Rippling instabilities in suspended nanoribbons

High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Contact Info

Product

Resources

About