Rational Design of Stimuli‐Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule‐Programmable Nanoelectronics

Abstract

The ability of electronic devices to act as switches makes digital information processing possible. Succeeding graphene, emerging Inorganic 2D Materials (i2DMs) have been identified as alternative 2D Materials to harbor a variety of active molecular components to move the current silicon‐based semiconductor technology forward to a post‐Moore era based on molecule‐based information processing components. In this regard, i2DMs benefits not only for their prominent physiochemical properties (e.g., the existence of band gap, contrary to graphene), but also their high surface‐to‐volume ratio rich in reactive sites (functionalization capability). Nonetheless, since this field is still in an early stage, having knowledge of both i) the different strategies for molecularly functionalizing the current library of i2DMs, and ii) the different types of active molecular components is a sine qua non condition for a rational design of stimuli‐responsive i2DMs capable of performing logical binary operations at the molecular level. Consequently, this Review provides a comprehensive tutorial for covalently anchoring ad hoc molecular components —as active units triggered by different external inputs— onto pivotal i2DMs to assess their role in the expanding field of Molecule‐Programmable Nanoelectronics for electrically monitoring bistable molecular switches. Limitations, challenges, and future perspectives of this emerging field which crosses materials chemistry with computation are critically discussed.This article is protected by copyright. All rights reserved

Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

“…two-dimensional (2D) material surfaces. 39–44 Transferring the underlying principles of redox-based memristive switching of metal-oxide devices 45 to the level of interaction of molecular compounds, containing redox/spin switchable and/or photo inducible metal centres, with bound resistive oxide layers might become a useful lever for modulating electron transport and even for programming memristive characteristics of such electronic and spintronic heterostructures.…”