Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Zheng, Zhaoke; Shi, Xiao‐Lei; Ao, Dongwei; Liu, Wei‐Di; Chen, Huajun; Li, Fu; Chen, Shuo; Tian, Xiaoqing; Li, Xinru; Duan, Jing‐Yi; Ma, Hongli; Zhang, Xianghua; Liang, Guangxing; Fan, Ping; Chen, Zhigang

doi:10.1016/j.nanoen.2020.105683

Cited by 86 publications

(39 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The doped thin films have a very low thermal conductivity κ of 0.68 Wm –1 K –1 and 0.51 Wm –1 K –1 because of the significant low lattice thermal conductivity κ lat of 0.45 and 0.43 Wm –1 K –1 , respectively. The main reason explaining such low κ lat is that the long wavelength phonons are effectively scattered by the nanograins and the short wavelength phonons are scattered by the “rattling” effect of the doping atoms. , Meanwhile, the dense nanostructure and high crystallinity endow the thin films with high charge-carrier mobility and acceptable electrical conductivity. As expected, these two thin films have the calculated ZT values of 0.56 and 0.06, respectively, at 300 K, which is enhanced to 1.12 and 0.71 at 500 K. These values are already very interesting for flexible devices.…”

Section: Resultsmentioning

confidence: 99%

CoSb₃-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Chen

et al. 2021

ACS Appl. Energy Mater.

Self Cite

View full text Add to dashboard Cite

Flexible thin-film thermoelectric devices have been extensively studied for powering wearable electronics, particularly as a power source for self-powered sensors or temperature detection. Skutterudite CoSb 3 is emerging as one of the most studied candidate materials for thermoelectric applications. This work is focused on comprehensive optimization in terms of CoSb 3 -based thin films as well as electrode materials and structures with the objective to fabricate high-performance flexible devices. CoSb 3 -based thin films with nanoparticles for the enhancement of phonon scattering have been fabricated using the vacuum sputtering method. N-type and P-type thin films can be obtained by appropriate doping with Ti and In, respectively. It has been demonstrated that a multilayer structure of electrodes can greatly enhance the thermoelectric performance of thermoelectric devices by increasing the output power and the thermal stability of the device in the air atmosphere. It has also been demonstrated the possibility of obtaining a relatively high output voltage of above 90 mV and a high-power density of 0.46 mW/cm 2 at a current intensity of about 0.35 mA with the device. Therefore, many applications can be considered. The thin-film thermoelectric device has also been tested as a thermal sensor, and it exhibits fast responsivity, with a reaction time of a few hundreds of milliseconds, as well as high stability.

show abstract

Section: Resultsmentioning

confidence: 99%

CoSb₃-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Chen

et al. 2021

ACS Appl. Energy Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…For a given operating temperature, the quality of TE materials is evaluated by the dimensionless parameter ZT = S 2 σT / k ( T , k , S , and σ are the absolute temperature, thermal conductivity, thermopower and electrical conductivity, respectively). 8–10 The power factor (PF = S 2 σ ) is another parameter indicating the performance of TE materials. 11,12…”

Section: Introductionmentioning

confidence: 99%

Camphor sulfonic acid incorporation in SnO₂/polyaniline nanocomposites for improved thermoelectric energy conversion

Debnath

Das

Deb

et al. 2022

Sustainable Energy Fuels

View full text Add to dashboard Cite

show abstract

“…There are multiple strategies to improve some of the thermoelectric properties in addition to nanostructuring, such as band engineering [42][43][44][45][46][47], energy filtering [48][49][50], the phonon glass electron crystal approach [51,52] or high entropy design [53].…”

Section: Introductionmentioning

confidence: 99%

SnSe:Kx intermetallic thermoelectric polycrystals prepared by arc-melting

et al. 2022

View full text Add to dashboard Cite

Neutron powder diffraction and thermoelectric characterization of SnSe:Kx intermetallic alloys are presented. Nanostructured ingots were prepared by arc-melting elemental tin and selenium along with potassium hydride. Up to x = 0.1 of K can be incorporated into SnSe. Rietveld refinement of the diffractograms locates potassium on the Sn site in the high-temperature Cmcm structure. However, in the low-temperature Pnma structure, K cannot be localized by difference Fourier maps, indicating the incorporation of K in a disordered form in the interlayer space. STEM-EELS indicates the incorporation of K into the SnSe grains. The resistivity upon K-doping at intermediate temperatures decreases by 1–2 orders of magnitude, but at high temperature is higher than the undoped SnSe. The Seebeck coefficient of K-doped SnSe remains p-type and almost temperature independent (400 μV/K for x = 0.1). The ultralow thermal conductivity of undoped SnSe decreases further upon K-doping to below 0.3 W/m K.

show abstract

Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Cited by 86 publications

References 51 publications

CoSb₃-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

CoSb₃-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Camphor sulfonic acid incorporation in SnO₂/polyaniline nanocomposites for improved thermoelectric energy conversion

SnSe:Kx intermetallic thermoelectric polycrystals prepared by arc-melting

Contact Info

Product

Resources

About

Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Cited by 86 publications

References 51 publications

CoSb3-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

CoSb3-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Camphor sulfonic acid incorporation in SnO2/polyaniline nanocomposites for improved thermoelectric energy conversion

SnSe:Kx intermetallic thermoelectric polycrystals prepared by arc-melting

Contact Info

Product

Resources

About

CoSb₃-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

CoSb₃-Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Camphor sulfonic acid incorporation in SnO₂/polyaniline nanocomposites for improved thermoelectric energy conversion