2005
DOI: 10.1007/s10812-006-0016-1
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Rate of intersubband transitions of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction

Abstract: 621.315.592The intersubband scattering of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction has been theoretically investigated. Analytical expressions for the rate of intersubband transitions in the process of electron-electron and electron-hole collisions have been derived in the Born approximation. The theoretical and experimental data on the photoluminescence decay time, obtained for the case of a nondegenerate distribution of charge carriers, were in qualitative agree… Show more

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“…For QCLs operating in the far IR range, we need to also take into account electron-electron scattering with transition rate [15] R ijfm ee = (2π)…”
mentioning
confidence: 99%
“…For QCLs operating in the far IR range, we need to also take into account electron-electron scattering with transition rate [15] R ijfm ee = (2π)…”
mentioning
confidence: 99%