Rate-determining reactions and surface species in CVD silicon

Bloem, J.; Claassen, W. A. P.; Valkenburg, W. G. J. N.

doi:10.1016/0022-0248(82)90264-0

Cited by 24 publications

(9 citation statements)

References 14 publications

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“…For a constant x SiCl 4 , higher R ax and R rad are achieved for higher H 2 molar fractions which can be attributed to more effective reduction of SiCl 4 by hydrogen . Increase of x SiCl 4 at constant ratio SiCl 4 /H 2 yields larger axial GRs, in agreement with the earlier reports on SiNWs growth from SiCl 4 and SiH 4 . ,,, Significantly, as shown in Figure b, this is accompanied by a decrease of the radial GR.…”

Section: Resultssupporting

confidence: 89%

“…The tapering degree versus x SiCl 4 is plotted in the inset in Figure . The GR trends qualitatively resemble those obtained for SiCl 4 -grown thin films. , The radial GR rapidly increases with increasing x SiCl 4 reaching a maximum at x SiCl 4 ≈ 0.0012 and then decreases with exponential-like behavior. The initial increase of the axial GR is slower, and in general, higher SiCl 4 concentrations are needed to achieve a maximum axial GR.…”

Section: Resultssupporting

confidence: 72%

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Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure

2010

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Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si nanowires grown by chemical vapor deposition (CVD) at reduced pressure from SiCl(4) precursor. Tapering of SiNWs is governed by the interplay between the catalyzed vapor-liquid-solid (VLS) and uncatalyzed vapor-solid (VS) growth mechanisms. We found that the uncatalyzed Si deposition on NW sidewalls, defined by a radial growth rate, can be enhanced by lowering SiCl(4)/H(2) molar ratio, applying higher gas flow rate, or reducing growth pressure. Distinct dependences of the axial and radial growth rates on the process conditions were employed to produce SiNWs with a tapering degree (i.e., a ratio of the radial/axial growth rates) varying by almost 2 orders of magnitude. The results are explained by an interplay between the thermodynamic and kinetic effects on the axial (VLS) and radial (VS) growth rates. Established correlation between the SiCl(4)/H(2) molar ratio and vertical alignment of nanowires was used to develop a two-stage growth procedure for producing tapered SiNW arrays with a predominantly vertical orientation.

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Section: Resultssupporting

confidence: 89%

Section: Resultssupporting

confidence: 72%

Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure

2010

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“…The use of trichlorosilane SiHCl3 as an alternative silicon precursor for the deposition of silicon nitride has not been much documented yet. This species is expected to have an intermediate reactivity between that of SiCl4 and SiH2Cl2 [9]. It appears as a promising precursor since it allows the deposition of amorphous silicon nitride at moderate temperatures [10].…”

Section: Sicl4mentioning

confidence: 99%

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

et al. 2019

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Stoichiometric silicon nitride films were deposited by low-pressure chemical vapor deposition from the SiHCl3-NH3-H2-Ar system in a hot wall reactor at pressures ranging from 0.3 to 2 kPa. The films are amorphous for deposition temperatures up to 1000 °C and crystalline, in the αform, at 1200 °C and above. A method for evaluating the internal stresses based on the curvature of the silicon substrate wafer and the resulting silicon Raman peak shift was developed. Some amorphous films exhibit high internal tensile stresses that can lead to cracking during deposition depending on the mechanism and effective precursors involved. Residual stresses can thus be reduced and cracking avoided by, in descending order of importance, reducing the concentration of reactive gases through dilution, increasing the deposition temperature and decreasing the total pressure. The effects of these parameters on the intrinsic stresses were related to the amount of residual hydrogen successively incorporated and thermally released during the growth of the coating according to the Noskov's model.

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“…The contributions of H 2 reduction and thermal decomposition to Si production have been qualitatively investigated by Sugiura and Fuwa for temperatures of 1023-1323 K. [81] Although the reactions are representatively expressed as Equations (6) and (7), the mechanism of Si deposition is complicated and includes a route via the chemical adsorption of SiCl 2 on the surface of the substrate. [73,76,[82][83][84][85] Therefore, the reaction for production of Si from SiHCl 3 is not expressed as H 2 reduction or thermal decomposition but as chemical vapor deposition (CVD), as it is a solid-gas reaction. [10] The deposition rate of Si in the Siemens process is approximately 1 mm h À1 , which is more than three times larger than in the case of H 2 reduction of SiCl 4 .…”

Section: H 2 Reduction And/or Thermal Decomposition Of Sihcl 3 (Siemementioning

confidence: 99%

Processes for Production of Solar‐Grade Silicon Using Hydrogen Reduction and/or Thermal Decomposition

2014

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High‐purity Si used for photovoltaic applications, namely, solar‐grade Si (SOG‐Si), is commercially manufactured using the Siemens process. Although the present levels of supply satisfy the demand, there can potentially be a shortage of SOG‐Si in the long term. To overcome the low productivity of the Siemens process, various types of SOG‐Si production/purification processes have been developed as post‐Siemens processes. Some processes are under development as new commercial processes. These processes can be classified into the following three categories: (1) hydrogen reduction and/or thermal decomposition of silane‐based gases in improved Siemens‐based processes, (2) metallothermic reduction of silicon halides by Zn or Al, and (3) upgrading metallurgical‐grade Si by employing metallurgical purification methods. This paper presents a review of various types of SOG‐Si production processes, particularly those based on the hydrogen reduction and/or thermal decomposition of halides and silane‐based gases. These processes are classified on the basis of Si compounds used and the reaction types; further, the features of these processes are also analyzed. Future prospects for the development of new high‐purity Si production process are also presented.

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Rate-determining reactions and surface species in CVD silicon

Cited by 24 publications

References 14 publications

Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure

Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

Processes for Production of Solar‐Grade Silicon Using Hydrogen Reduction and/or Thermal Decomposition

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Rate-determining reactions and surface species in CVD silicon

Cited by 24 publications

References 14 publications

Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

Processes for Production of Solar‐Grade Silicon Using Hydrogen Reduction and/or Thermal Decomposition

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Product

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Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure

Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure