Rashba spin splitting in two-dimensional electron gas in polar-polar perovskite oxide heterostructure LaVO3/KTaO3: A DFT investigation

Kakkar, Sonali; Bera, Chandan

doi:10.1016/j.physe.2022.115394

Cited by 6 publications

(2 citation statements)

References 59 publications

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“…Thus, we selected U eff = 4 eV for the d orbitals of Pd and Ta atoms. 31 The surface states and Berry curvatures were obtained based on the maximally localized Wannier functions from the WANNIER90 package. 32 The VASPBERRY 33 code was used to obtain the Chern number.…”

Section: Methodsmentioning

confidence: 99%

Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)

He,

Kang,

Zhou

et al. 2024

J. Mater. Chem. C

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Section: Methodsmentioning

confidence: 99%

Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)

He,

Kang,

Zhou

et al. 2024

J. Mater. Chem. C

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“…[ 21 ] In addition, the use of a high‐k 5d oxide, KTO, as a substrate material is currently attracting interest in oxide heteroepitaxy. [ 22–27 ]…”

Section: Introductionmentioning

confidence: 99%

Non‐Trivial Topological States in Spin‐Polarized 2D Electron Gas at EuO–KTO Interface with the Rashba Spin Texture

Kakkar¹,

Bera²

2022

Advanced Physics Research

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Oxide heterointerfaces are gaining popularity for a variety of applications because of a wide range of emergent quantum phenomena. The creation of a highly conducting and spin-polarized 2D electron gas (2DEG) with anomalous Hall effect at the EuO-KTaO 3 (KTO) interface is reported by Zhang et al. (Phys. Rev. Lett. (2018), 121, 116803). The spin-polarized 2DEG at the interface in EuO/KTO superlattice with a comprehensive electronic structure calculation using density functional theory (DFT) is investigated. It is shown that the magnetic ordering at the interface is related to the occupation of d xy orbitals of interfacial Ta. The band-crossing points between the majority and minority spin states open a gap when spin-orbit coupling (SOC) is turned on. The large spikes of the Berry curvature 𝛀(k) at the momenta of spin-orbit (SO) gaps and integral Chern number demonstrate the non-trivial band topology. As the system remains metallic, it can display quantum anomalous Hall (QAH) insulating characteristics possibly via strain engineering. The spin texture of the bands with the SO gap on constant energy contour displays single spin winding of electron spin with opposite chirality. The magnetic easy axis is perpendicular to the interfacial plane. Hence, our findings suggest that EuO/KTO system has potential in low-power quantum electronics, spintronics, and spin-orbitronics.

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DFT/TDDFT study of electronic, structural and optical properties of RbPbBr3/RbSnBr3 and RbXBr3/RbXBr2Cl (X = Pb, Sn) heterostructures

Safaei Ardakani,

Moradi

2024

Indian J Phys

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Rashba spin splitting in two-dimensional electron gas in polar-polar perovskite oxide heterostructure LaVO3/KTaO3: A DFT investigation

Cited by 6 publications

References 59 publications

Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)

Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)

Non‐Trivial Topological States in Spin‐Polarized 2D Electron Gas at EuO–KTO Interface with the Rashba Spin Texture

DFT/TDDFT study of electronic, structural and optical properties of RbPbBr3/RbSnBr3 and RbXBr3/RbXBr2Cl (X = Pb, Sn) heterostructures

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Rashba spin splitting in two-dimensional electron gas in polar-polar perovskite oxide heterostructure LaVO3/KTaO3: A DFT investigation

Cited by 6 publications

References 59 publications

Excellent intrinsic Chern insulators: monolayer PdTaX2 (X = Se, Te)

Excellent intrinsic Chern insulators: monolayer PdTaX2 (X = Se, Te)

Non‐Trivial Topological States in Spin‐Polarized 2D Electron Gas at EuO–KTO Interface with the Rashba Spin Texture

DFT/TDDFT study of electronic, structural and optical properties of RbPbBr3/RbSnBr3 and RbXBr3/RbXBr2Cl (X = Pb, Sn) heterostructures

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Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)

Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)