Rashba spin-splitting in Janus SnXY/WXY (X, Y = S, Se, Te; X ≠ Y) heterostructures

Abstract

Janus transition metal dichalcogenide monolayers have shown a lack of mirror symmetry perpendicular to the 2D plane. The breaking of out-of-plane symmetry, along with the spin-orbit coupling, induces Rashba spin-splitting in these materials. In this work, Rashba spin splitting in Janus tin dichalcogenide monolayers are studied. In addition, the heterostructures of Janus SnXY and WXY (X, Y = S, Se, Te; X 6 = Y) monolayers are discussed. A Rashba spin-splitting energy of about 43 meV, more significant than the room temperature energy, is observed in the Janus SnSSe/WSSe heterostructure. The consequences of vertical strain on the semiconducting heterostructure are examined. Compressive vertical strain enhances the Rashba splitting, and tensile strain reduces the spin-splitting. For the compressive strain of 10.4%, Janus SnSSe/WSSe heterostructure remains semiconductor with only Rashba bands surrounding near the Fermi level. Enhanced Rashba parameter of about 0.96 eVÅ and splitting energy of about 72 meV are observed. These findings confirm that Janus SnSSe/WSSe heterostructure is a productive Rashba material for spintronic device applications.

Rashba effect: a chemical physicist's approach

“…[45][46][47][48][49][50] However, it also delves into GSS induced in novel 2D layered materials, including transition-metal dichalcogenides (TMDs), [51][52][53][54][55][56][57] MXenes, [58][59][60][61][62][63] and a variety of other sheets. [64][65][66][67][68][69][70][71][72] To facilitate the ongoing efforts, it is crucial to develop more robust strategies for enhancing spin splitting. Clear guiding principles need to be established to design materials with desired GSS.…”

“…As a result, it becomes essential to thoroughly characterize and understand spin splitting in novel cases, such as on van der Waals (vdW) heterostructures, 3,52,54,60,64,73 topological insulators, 17,74,75 and Janus-type 2D materials. 61,63,70,72 Additionally, structural modification of these novel platforms must be considered to unlock their full potential for spintronics applications.…”

“…45–50 However, it also delves into GSS induced in novel 2D layered materials, including transition-metal dichalcogenides (TMDs), 51–57 MXenes, 58–63 and a variety of other sheets. 64–72…”