Rashba spin splitting in inversion layers on<b><i>p</i></b>-type bulk InAs

Matsuyama, T.; Kürsten, Rüdiger; Meißner, Christian; Merkt, U.

doi:10.1103/physrevb.61.15588

Cited by 187 publications

(121 citation statements)

References 24 publications

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“…Note that an asymmetrical confining potential in the direction perpendicular to the 2DEG (theŷ direction) is necessary, otherwise α = 0 and there will be no Rashba SO interaction. It is worth to mention that the Rashba SO interaction strength α can be tuned in an experiment by an external electric field or gate voltage, which have already been done in some recent experiments 28,29,30,31 . Finally, if we consider other forms of the potential energy V (r), we obtain other kinds of SO interactions, but the essence of SO coupling is the interaction of the external electric field on the moving spins.…”

Section: Hamiltonian Of the Metal-qd-metal Devicementioning

confidence: 99%

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Quantum transport theory for nanostructures with Rashba spin-orbital interaction

2005

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We report on a general theory for analyzing quantum transport through devices in the Metal-QD-Metal configuration where QD is a quantum dot or the device scattering region which contains Rashba spin-orbital and electron-electron interactions. The metal leads may or may not be ferromagnetic, they are assumed to weakly couple to the QD region. Our theory is formulated by second quantizing the Rashba spin-orbital interaction in spectral space (instead of real space), and quantum transport is then analyzed within the Keldysh nonequilibrium Green's function formalism. The Rashba interaction causes two main effects to the Hamiltonian: (i) it gives rise to an extra spin-dependent phase factor in the coupling matrix elements between the leads and the QD; (ii) it gives rise to an inter-level spin-flip term but forbids any intra-level spin-flips. Our formalism provides a starting point for analyzing many quantum transport issues where spin-orbital effects are important. As an example, we investigate transport properties of a Aharnov-Bohm ring in which a QD having Rashba spin-orbital and e-e interactions is located in one arm of the ring. A substantial spin-polarized conductance or current emerges in this device due to a combined effect of a magnetic flux and the Rashba interaction. The direction and strength of the spin-polarization are shown to be controllable by both the magnetic flux and a gate voltage.

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Section: Hamiltonian Of the Metal-qd-metal Devicementioning

confidence: 99%

“…Assuming the Rashba SO interaction strength α ∼ 3 × 10 −11 eV m, which is the reported value for some semiconductors 12,29,30 , k R = m * α/ 2 ≈ 0.015/nm for m * = 0.036m e . Then, if the length of the QD is the typical value 100nm, k R L ≈ 1.5.…”

Section: Example: Transport Properties Of An Ab Ring With Rashba mentioning

confidence: 99%

Quantum transport theory for nanostructures with Rashba spin-orbital interaction

2005

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“…In addition, the M-shape of the VSBs, which is imposed by the VB dispersion, is expected to further decrease the Rashba splitting. Nonparabolicity effects have been found to reduce considerably the Rashba splitting especially for semiconductors with small bandgap, as it is the case for Bi 2 Se 3 [45][46][47].…”

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confidence: 99%

Origin of Rashba splitting in the quantized subbands at the Bi2Se3surface

et al. 2013

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We study the band structure of the Bi2Se3 topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba spin-splitting are created via bending of the conduction (CB) and the valence (VB) bands at the surface. While the CB subbands are strongly Rashba spin-split, the VB subbands do not exhibit clear spin-splitting. We find that CB and VB experience similar band bending magnitudes, which means, a spin-splitting discrepancy due to different surface potential gradients can be excluded. On the other hand, by comparing the experimental band structure to first principles LMTO band structure calculations, we find that the strongly spin-orbit coupled Bi 6p orbitals dominate the orbital character of CB, whereas their admixture to VB is rather small. The spinsplitting discrepancy is, therefore, traced back to the difference in spin-orbit coupling between CB and VB in the respective subbands' regions. 73, The narrow bandgap semiconductor Bi 2 Se 3 has been known for decades for its good thermoelectric properties [1,2]. The recent observation of a topologically protected surface state (TSS) in Bi 2 Se 3 [3, 4] marked the discovery of a model system for 3D topological insulators (TIs) and has lead to a surge of renewed interest in the properties of this material. The Bi 2 Se 3 (111) surface hosts within a gap of bulk bands projected onto the surface Brillouin zone (BZ) a single TSS with Dirac cone dispersion [3][4][5]. Similar TSS dispersion has been found in other Bi-based systems, such as, Bi 2 Te 3 and PbBi 2 Te 4 [4, 6]. The TSS is robust against scattering from non-magnetic perturbations. Moreover, it possesses a helical character, which infers a defined spin polarization for a particular momentum value. These characteristics might lend themselves to a variety of new applications, especially, in spintronics, where transport and manipulation of spin currents at high temperatures and with diminutive scattering interactions are sought out [7][8][9][10].It has already been shown that the modification of the Bi 2 Se 3 surface with non-magnetic adsorbates [4,[11][12][13][14], as well as heating up to 400 K [15] does not alter TSS protection. However, it dopes the TSS and can even change surface electronic properties. Surface n-doping creates two sets of new states at the surface, which appear simultaneously in the immediate vicinity of the TSS within the projected bulk conduction band (CB) and valence band (VB) regions. While parabolic bands with a large Rashba splitting are observed above the Dirac point (E D ), the bands below are M-shaped, can overlap with the TSS, and do not show a clear spin splitting. These two band sets have been mainly interpreted as quantized subbands resulting from the confinement of a pair of two-dimensional electron gases (2DEGs) at the surface created via CB and VB bending [13,14,[16][17][18]. Practically, the largely spin-split bands add a new feature to Bi 2 Se 3 surface for spintron...

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“…Reynoso et al [11] studied the edge states in a two-dimensional electron gas with a transverse magnetic field and Rashba spin-orbit (SO) coupling. Matsuyama et al [12] discussed the dependence of the spin-orbit interaction on electron density in inversion layers of metal-oxide-semiconductor field-effect transistors on p-type InAs by magnetotransport at liquid-helium temperatures. Considering the influence of the Rashba SO interaction on the condition of the electron-LO phonon strong coupling in a parabolic QD, Yin et al [13] calculated the bound polaron ground state energy by the variational method of Pekar.…”

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confidence: 99%

Rashba Effect on the Bound Polaron in an Asymmetric Quantum Dot

2014

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By using LLP variational method, the Rashba effect on the bound polaron in an asymmetric quantum dot is investigated and the expression of the bound polaron ground state energy is derived. Considering different Coulomb bound potentials, we discuss the relations between the ground state energy and the electron-phonon coupling strength, the wave vector, the transverse effective confinement length and the longitudsinal effective confinement length, respectively. The results show that the ground state energy is a decreasing function of the Coulomb bound potential, the electron-phonon coupling strength, the transverse effective confinement length and the longitudinal effective confinement length. On the contrary, it is an increasing function of the wave vector. Due to the Rashba effect, the ground state energy splits into two branches.

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Rashba spin splitting in inversion layers onp-type bulk InAs

Cited by 187 publications

References 24 publications

Quantum transport theory for nanostructures with Rashba spin-orbital interaction

Quantum transport theory for nanostructures with Rashba spin-orbital interaction

Origin of Rashba splitting in the quantized subbands at the Bi2Se3surface

Rashba Effect on the Bound Polaron in an Asymmetric Quantum Dot

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