Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>InAlAs</mml:mi><mml:mi>/</mml:mi><mml:mi>InGaAs</mml:mi><mml:mi>/</mml:mi><mml:mi>InAlAs</mml:mi></mml:math>Quantum Wells as a Function of Quantum Well Asymmetry

Koga, Tomohiro; Nitta, Junsaku; Akazaki, Tatsushi; Takayanagi, Hideaki

doi:10.1103/physrevlett.89.046801

Cited by 488 publications

(366 citation statements)

References 28 publications

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“…Figure 1 presents a pattern of α R (ρ) obtained by a Monte-Carlo produced white-noise distribution of dopant ions corresponding to the experimental data of Ref. [13]. As can be seen in Fig.…”

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confidence: 97%

“…A crucially important step in being able to quickly manipulate the spins has been made by demonstrating that, by applying external bias across the quantum well, it is possible to change the magnitude of α 11,12,13,14,15 . Almost all previous studies assumed the α parameter to be constant in space.…”

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confidence: 99%

“…For numerical estimates we use the parameters from Refs. [13,25] with N u = 10 11 cm −2 and N d = 3 × 10 11 cm −2 . Then the ratio ε 2 F / U 2 is of the order of 100 leading to τ two orders of magnitude longer than τ d ∼ 0.03 ps.…”

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Nonexponential spin relaxation in magnetic fields in quantum wells with random spin-orbit coupling

Glazov

Sherman

2005

Phys. Rev. B

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We investigate the spin dynamics of electrons in quantum wells where the Rashba type of spin-orbit coupling is present in the form of random nanosize domains. We study the effect of magnetic field on the spin relaxation in these systems and show that the spatial randomness of spin-orbit coupling limits the minimum relaxation rate and leads to a Gaussian time-decay of spin polarization due to memory effects. In this case the relaxation becomes faster with increase of the magnetic field in contrast to the well known magnetic field suppression of spin relaxation.The effect of magnetic field on spin relaxation in lowdimensional structures in the presence of spin-orbit (SO) coupling is an interesting theoretical and experimental problem. The understanding of this effect which allows to a certain extent the engineering of the spin dynamics in these systems can have a crucial impact on the possible spintronics applications. 1 The SO coupling of electrons in two-dimensional (2D) zincblende-based systems with the structural asymmetry grown along the [001] direction is described by the Rashba Hamiltonian, where α is the coupling constant,σ i are the Pauli matrices, and k is the in-plane wavevector of the electron. The random spin precession necessary for the spin relaxation is introduced by electron scattering by impurities, phonons, other electrons 3,4 and due to random dynamics in regular systems. 5 In the "dirty" limit, αkτ /h ≪ 1 with τ being the momentum relaxation time, the motional narrowing leads to the Dyakonov-Perel' mechanism 6 causing the exponential spin relaxation with the rate of the order of (αk/h) 2 τ . The spin relaxation rate decreases when a magnetic field is applied 7 due to the effect of the Lorenz force on the orbital movement of the electron. From the analysis of the spin relaxation in a magnetic field valuable information both on spin and charge dynamics can be extracted. 8 In the clean limit, αkτ /h ≫ 1 spin relaxation, on a time scale of the order of τ , occurs on the top of the spin precession 9 . Various mechanisms of spin relaxation in solids are reviewed in Ref. [10].In most quantum wells (QW) the Rashba-type SO coupling is achieved by asymmetric remote doping at the sides of the well; the same doping forms a smooth random potential scattering electrons. A crucially important step in being able to quickly manipulate the spins has been made by demonstrating that, by applying external bias across the quantum well, it is possible to change the magnitude of α 11,12,13,14,15 . Almost all previous studies assumed the α parameter to be constant in space. However, the evidence is growing that the SO coupling both in zincblende and Si x Ge 1−x /Si-based QWs 16,17 is a random function of coordinate. The randomness arises due to imperfections in the system, e.g. either due to shot noise accompanying the doping 16 or due to random variations of the bonds at Si/Ge interfaces 17 in the Si x Ge 1−x /Si systems considered as a hope for spintronics due to a very small SO coupling there. 18,19 Therefore, the ...

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Nonexponential spin relaxation in magnetic fields in quantum wells with random spin-orbit coupling

Glazov

Sherman

2005

Phys. Rev. B

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“…In addition to the gate voltage, the transconductance can be also controlled via an external magnetic field. Rather than a new electronic device, the spin transistor initiated many studies on spin-polarized transport and spin-injection phenomena in semiconductor/ferromagnetic junctions [8][9][10][11][12][14][15][16][17]. The spin transistor relies upon controlling the precession of the electron spin in the conducting channel due to the influence of the Rashba term.…”

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“…Datta and Das proposed the concept of a spin-polarized field effect transistor in narrow band gap semiconductors such as InGaAs [7]. On the one hand, the structure inversion asymmetry in these materials allows controlling the electron spin precession by an electric field [8][9][10][11][12][13][14].…”

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Spin Relaxation: From 2D to 1D

Holleitner

2010

CFN Lectures on Functional Nanostructures - Volume 2

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In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electronspin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the onedimensional limit.

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Spin Injection–Extraction Processes in Metallic and Semiconductor Heterostructures

Bratkovsky¹

2010

Nanotechnology

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Spintronics is a discipline focusing on phenomena and devices essentially dependent on spin transport. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, (pseudo)spin‐torque and spin–orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM–S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The derived criterion for efficient injection suggests that the barrier should be rather transparent (this is opposite to a criterion in the literature suggesting that it should be opaque). In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin‐valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square‐law detector and a source of polarized radiation. We also discuss effects related to spin–orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as ‘spinFET’, interacting spin logic and spin‐based quantum computing are discussed and problems with their realization are highlighted.

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Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis inInAlAs/InGaAs/InAlAsQuantum Wells as a Function of Quantum Well Asymmetry

Cited by 488 publications

References 28 publications

Nonexponential spin relaxation in magnetic fields in quantum wells with random spin-orbit coupling

Nonexponential spin relaxation in magnetic fields in quantum wells with random spin-orbit coupling

Spin Relaxation: From 2D to 1D

Spin Injection–Extraction Processes in Metallic and Semiconductor Heterostructures

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