Abstract:Herein, a rare metal‐free oxide‐based semiconductor channel layer is constructed with excellent electrical properties and stabilities by fabricating zinc–tin oxide (ZTO) thin film transistors (TFTs) using tin (Sn) as the dopant element in ZnO. Furthermore, to improve the performance and stability of ZTO TFTs, microwave annealing (MWA) powered by energy conversion from electromagnetic energy to heat energy rather than heat transfer is conducted as the post‐deposition annealing (PDA) process of the ZTO channel l… Show more
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